价 格: | 面议 | |
型号/规格: | BSC016N04LSG,QFN-8 5*6/PG-TDSON-8,SMD/MOS,N场,40V,100A,0.0016Ω | |
品牌/商标: | INFINEON(英飞凌) | |
封装形式: | QFN-8 5*6/PG-TDSON-8 | |
环保类别: | 无铅环保型 | |
安装方式: | 贴片式 | |
包装方式: | 5000/盘 |
BSC016N04LSG,QFN-8 5*6/PG-TDSON-8,SMD/MOS,N场,40V,100A,0.0016Ω
Parameter | Symbol | Conditions | Value | Unit |
Drain-source breakdown voltage | V(BR)DSS | VGS=0V,ID=1mA | 40 | V |
Continuous drain current | ID | VGS=10V,TC=25℃ | 100 | A |
Pulsed drain current | IDM | TC=25℃ | 400 | A |
Avalanche energy, single pulse | EAS | ID=50A, RGS=25Ω | 295 | mJ |
Gate source voltage | VGS | ±20 | V | |
Power dissipation | Ptot | TC=25℃ | 139 | W |
Gate threshold voltage | VGS(th) | VDS=VGS,ID=85µA | 2 | V |
Drain-source on-state resistance | RDS(on) | VGS=10V, ID=50A | 1.6 | mΩ |
Input capacitance | Ciss | VGS=0V,VDS=15V, f=1MHz | 8900 | PF |
Transconductance | gfs | |VDS|>2|ID|RDS(on)max,ID=50A | 190 | S |
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产品型号:BSC057N03MSG 封装:QFN-8 5*6/PG-TDSON-8 源漏极间雪崩电压V(br)dss(V):30 夹断电压VGS(V):±16 雪崩能量EAS(mJ):25 漏极电流Id(A):71 源漏极导通电阻rDS(on)(Ω):0.0057@VGS = 10 V 开启电压VGS(TH)(V):2 功率PD(W):45 极间电容Ciss(PF):2300 通道极性:N通道 低频跨导gFS(s):70 温度(℃): -55 ~150 描述:30V,71A, N-channel OptiMOS Power-MOSFET (产品图片,产品参数,产品PDF等产品相关信息在线了解\查询\下载.)
MOS管,广泛应用于电池充电器,普通电源,智能开关电源,灯具 功率开关,LED,车载,玩具,电动车,电脑主板. 产品型号:CEP20P06 源漏极间雪崩电压V(br)dss(V):-60 夹断电压VGS(V):±20 漏极电流Id(A):-14 源漏极导通电阻rDS(on)(Ω):0.125 开启电压VGS(TH)(V):-3 功率PD(W):50 极间电容Ciss(PF):615 通道极性:P沟道 封装/温度(℃):TO-220 /-55 ~150 描述:-60V, -14A P-Channel Enhancement Mode Field Effect Transistor