| 价 格: | 0.88 | |
| 封装外形: | CHIP/小型片状 | |
| 型号/规格: | APM3009NUC-TRG | |
| 材料: | GaAS-FET砷化镓 | |
| 用途: | MOS-INM/独立组件 | |
| 品牌/商标: | Sinopower | |
| 沟道类型: | N沟道 | |
| 种类: | 绝缘栅(MOSFET) | |
| 导电方式: | 增强型 | |
| 属性: | 属性值 |
30V/50A,
RDS(ON)=7.5mW (typ.) @ VGS=10V
RDS(ON)=11mW (typ.) @ VGS=4.5V
· Super High Dense Cell Design
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
Channel 130V/9A,RDS(ON) = 27mW (max.) @ VGS = 10VRDS(ON) = 33mW (max.) @ VGS = 4.5V· Channel 230V/12A,RDS(ON) = 14mW (max.) @ VGS =10VRDS(ON) = 20mW (max.) @ VGS =4.5V· Super High Dense Cell Design· Reliable and Rugged· Lead Free Available (RoHS Compliant)Applications· Power Management in Notebook Computer,Portable Equipment and Battery PoweredSystems
40V/60A,RDS(ON)=6.5mW (typ.) @ VGS=10VRDS(ON)=10.5mW (typ.) @ VGS=4.5V· Super High Dense Cell Design· Reliable and Rugged· Lead Free and Green Devices Available (RoHSCompliant)