价 格: | 面议 | |
型号/规格: | 型号BSH103/印记PJ3 | |
品牌/商标: | NXP | |
封装形式: | SOT-23 | |
环保类别: | 无铅环保型 | |
安装方式: | 贴片式 | |
包装方式: | 盒带编带包装 | |
功率特征: | |
供应30V,0.85A N-CH MOS管BSH103
FEATURES
· Very low threshold
· High-speed switching
· No secondary breakdown
· Direct interface to C-MOS, TTL etc.
APPLICATIONS
· Power management
· DC to DC converters
· Battery powered applications
· ‘Glue-logic’; interface between logic blocks and/or
periphery
· General purpose switch.
DESCRIPTION
N-channel enhancement mode MOS transistor in a SOT23
SMD package.
供应60V,115MA N-CH MOS管2N7002 2N7000 / 2N7002 / NDS7002AN-Channel Enhancement Mode Field Effect TransistorGeneral Description Features___________________________________________________________________________________________Absolute Maximum Ratings TA = 25°C unless otherwise notedSymbol Parameter 2N7000 2N7002 NDS7002A UnitsVDSS Drain-Source Voltage 60 VVDGR Drain-Gate Voltage (RGS < 1 MW) 60 VVGSS Gate-Source Voltage - Continuous ±20 V- Non Repetitive (tp < 50μs) ±40ID Maximum Drain Current - Continuous 200 115 280 mA- Pulsed 500 800 1500PD Maximum Power Dissipation 400 200 300 mWDerated above 25oC 3.2 1.6 2.4 mW/°CTJ,TSTG Operating and Storage Temperature Range -55 to 150 -65 to 150 °CTL Maximum Lead Temperature for SolderingPurposes, 1/16" from Case for 10 Seconds300 °CTHERMAL CHARACTERISTICSRqJAThermal Resistance, Junction-to-Ambient 312.5 625 417 °C/W2N7000.SAM Rev. A1These N-Channel enhancement mode field effect transistorsare produced using Fairchild's propr...
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