价 格: | 1.75 | |
封装外形: | CHIP/小型片状 | |
型号/规格: | SM4912TSKC-TRG | |
材料: | GE-N-FET锗N沟道 | |
用途: | MOS-HBM/半桥组件 | |
品牌/商标: | Sinopower | |
沟道类型: | N沟道 | |
种类: | 绝缘栅(MOSFET) | |
导电方式: | 增强型 | |
属性: | 属性值 |
Channel 1
30V/9A,
RDS(ON) = 27mW (max.) @ VGS = 10V
RDS(ON) = 33mW (max.) @ VGS = 4.5V
· Channel 2
30V/12A,
RDS(ON) = 14mW (max.) @ VGS =10V
RDS(ON) = 20mW (max.) @ VGS =4.5V
· Super High Dense Cell Design
· Reliable and Rugged
· Lead Free Available (RoHS Compliant)
Applications
· Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
40V/60A,RDS(ON)=6.5mW (typ.) @ VGS=10VRDS(ON)=10.5mW (typ.) @ VGS=4.5V· Super High Dense Cell Design· Reliable and Rugged· Lead Free and Green Devices Available (RoHSCompliant)
· 30V/15A,RDS(ON) = 5.5mW(typ.) @ VGS = 10VRDS(ON) =7mW(typ.) @ VGS = 4.5V· Super High Dense Cell Design· Reliable and Rugged· SOP-8 Package· Lead Free and Green Devices Available(RoHS Compliant)