价 格: | 面议 | |
型号/规格: | APT8065BVFR,IXFH13N80,FQA13N80 | |
品牌/商标: | APT | |
封装形式: | TO-247 | |
环保类别: | 普通型 | |
安装方式: | 直插式 | |
包装方式: | 散装 | |
功率特征: | |
供应800V,13A 0.650Ω,MOS管APT8065BVFR
Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
• Fast Recovery Body Diode • 100% Avalanche Tested
• Lower Leakage • Popular TO-247 Package
• Faster Switching
供应50V,2A NPN 功率开关三极管2SC3076 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)2SC3076Power Amplifier ApplicationsPower Switching Applications• Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A)• Excellent switching time: tstg = 1.0 μs (typ.)• Complementary to 2SA1241
供应50V,2A PNP 功率开关三极管2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)2SA1241Power Amplifier ApplicationsPower Switching Applications• Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A)• Excellent switching time: tstg = 1.0 μs (typ.)• Complementary to 2SC3076