现货热销RHRP30120
| 价 格： | 面议 | |
| 品牌： | 仙童 飞兆 Fairchild FSC | |
| 型号： | RHRP30120 | |
| 种类： | 绝缘栅(MOSFET) | |
| 沟道类型： | N沟道 | |
| 导电方式： | 增强型 | |
| 用途： | A/宽频带放大 | |
| 封装外形： | CER-DIP/陶瓷直插 | |
| 材料： | ALGaAS铝镓砷 | |
| 开启电压： | 1（V） | |
| 夹断电压： | 1（V） | |
| 低频跨导： | 1（μS） | |
| 极间电容： | 1（pF） | |
| 低频噪声系数： | 1（dB） | |
| 漏极电流： | 1（mA） | |
| 耗散功率： | 1（mW） |
仙童 飞兆 Fairchild代理
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- 所属城市：广东 深圳
- [联系时请说明来自维库仪器仪表网]
- 联系人： 杨宝林
- 电话：755-88250321
- 传真：755-88250321
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现货热销仙童FQA70N15
信息内容：仙童 MOS IGBT 场效应管Manufacturer:Fairchild Semiconductor Product Category:MOSFETs RoHS:dzsc/18/8791/18879104.jpg Details Product:General Purpose MOSFETs Configuration:Single Package / Case:TO-3P Transistor Polarity:N-Channel Drain-Source Breakdown Voltage:150 V Continuous Drain Current:70 A Power Dissipation:330000 mW Forward Transconductance gFS (Max / Min):48 S Resistance Drain-Source RDS (on):0.028 Ohm @ 10 V Typical Fall Time:290 ns Typical Rise Time:420 ns Typical Turn-Off Delay Time:340 ns Packaging:Tube Gate-Source Breakdown Voltage: /- 25 V Maximum Operating Temperature:175 C Minimum Operating Temperature:- 55 C Type:MOSFET
现货热销仙童FQA38N30
信息内容：仙童 MOS IGBT 场效应管Manufacturer:Fairchild Semiconductor Product Category:MOSFETs RoHS:dzsc/18/8793/18879345.jpg Details Product:General Purpose MOSFETs Configuration:Single Package / Case:TO-3P Transistor Polarity:N-Channel Drain-Source Breakdown Voltage:300 V Continuous Drain Current:38.4 A Power Dissipation:290000 mW Forward Transconductance gFS (Max / Min):24 S Resistance Drain-Source RDS (on):0.085 Ohm @ 10 V Typical Fall Time:190 ns Typical Rise Time:430 ns Typical Turn-Off Delay Time:170 ns Packaging:Tube Gate-Source Breakdown Voltage: /- 30 V Maximum Operating Temperature:150 C Minimum Operating Temperature:- 55 C Type:MOSFET
