价 格: | 面议 | |
品牌: | FAIRCHILD/仙童 | |
型号: | FQA38N30 | |
种类: | 绝缘栅(MOSFET) | |
沟道类型: | N沟道 | |
导电方式: | 增强型 | |
用途: | NF/音频(低频) | |
封装外形: | CER-DIP/陶瓷直插 | |
材料: | ALGaAS铝镓砷 | |
开启电压: | 1(V) | |
夹断电压: | 1(V) | |
跨导: | 1(μS) | |
极间电容: | 1(pF) | |
低频噪声系数: | 1(dB) | |
漏极电流: | 1(mA) | |
耗散功率: | 1(mW) |
仙童 MOS IGBT 场效应管
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本公司是台湾TRINNO的一级代理商,全力致力于TRINNO的MOSFET的推广 性比价优于美格纳,及国内知名的士兰微,可以申请样品测试。
仙童 MOS IGBT 场效应管Manufacturer:Fairchild Semiconductor Product Category:MOSFETs RoHS:dzsc/18/9930/18993018.jpg Details Product:General Purpose MOSFETs Configuration:Single Package / Case:TO-3P Transistor Polarity:N-Channel Drain-Source Breakdown Voltage:150 V Continuous Drain Current:79 A Power Dissipation:417000 mW Resistance Drain-Source RDS (on):0.03 Ohm @ 10 V Typical Fall Time:38 ns Typical Rise Time:200 ns Typical Turn-Off Delay Time:55 ns Packaging:Tube Gate-Source Breakdown Voltage: /- 30 V Maximum Operating Temperature:150 C Minimum Operating Temperature:- 55 C "