价 格: | 0.10 | |
型号/规格: | 8N65 | |
品牌/商标: | NCE(新洁能) | |
封装形式: | TO-252 | |
环保类别: | 普通型 | |
安装方式: | 贴片式 | |
包装方式: | 盒带编带包装 | |
功率特征: | |
8安培,600V或650V高压MOS管,酷MOS供应。超薄适配器,高效LED灯电源之热门。
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low
gate charge. This super junction MOSFET fits the industry’s
AC-DC SMPS requirements for PFC, AC/DC power
conversion, and industrial power applications.
Features
●New technology for high voltage device
●Low on-resistance and low conduction losses
●small package
●Ultra Low Gate Charge cause lower driving requirements
●100% Avalanche Tested
Application
● Power factor correction(PFC)
● Switched mode power supplies(SMPS)
● Uninterruptible Power Supply(UPS)
7 Amps, 700 Volts N-CHANNEL POWER MOSFETDESCRIPTIONThe UTC 7N70 is a high voltage MOSFET and is designed tohave better characteristics, such as fast switching time, low gatecharge, low on-state resistance and have a high rugged avalanchecharacteristics. This power MOSFET is usually used at high speedswitching applications in power supplies, PWM motor controls, highefficient DC to DC converters and bridge circuits.FEATURES* RDS(ON) = 1.5Ω @VGS = 10 V* Ultra low gate charge ( typical 30 nC )* Low reverse transfer capacitance ( CRSS = typical 18 pF )* Fast switching capability* Avalanche energy specified* Improved dv/dt capability, high ruggedness
General Description?CS1N60C3H, the silicon N-channel EnhancedVDMOSFETs, is obtained by the self-aligned planar Technologywhich reduce the conduction loss, improve switchingperformance and enhance the avalanche energy. The transistorcan be used in various power switching circuit for systemminiaturization and higher efficiency. The package form is TO-251,which accords with the RoHS standard.Features?z Fast Switchingz Low ON Resistance(Rdso小于等于12欧姆) z Low Gate Charge (Typical Data:6nC)z Low Reverse transfer capacitances(Typical:2.7pF)z 100% Single Pulse avalanche energy Test VDSS 600 VID 1.0 APD (TC=25?) 30 WRDS(ONMax. 12