General Description?
CS1N60C3H, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-251,
which accords with the RoHS standard.
Features?
z Fast Switching
z Low ON Resistance(Rdso小于等于12欧姆）

 z Low Gate Charge (Typical Data:6nC)
z Low Reverse transfer capacitances(Typical:2.7pF)
z 100% Single Pulse avalanche energy Test

VDSS 600 V
ID 1.0 A
PD (TC=25?) 30 W
RDS(ONMax. 12

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