价 格: | 0.10 | |
型号/规格: | 7N70 | |
品牌/商标: | UTC(台湾友顺) | |
封装形式: | TO-220F | |
环保类别: | 普通型 | |
安装方式: | 直插式 | |
包装方式: | 管装 | |
功率特征: | |
7 Amps, 700 Volts N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 7N70 is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON) = 1.5Ω @VGS = 10 V
* Ultra low gate charge ( typical 30 nC )
* Low reverse transfer capacitance ( CRSS = typical 18 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
General Description?CS1N60C3H, the silicon N-channel EnhancedVDMOSFETs, is obtained by the self-aligned planar Technologywhich reduce the conduction loss, improve switchingperformance and enhance the avalanche energy. The transistorcan be used in various power switching circuit for systemminiaturization and higher efficiency. The package form is TO-251,which accords with the RoHS standard.Features?z Fast Switchingz Low ON Resistance(Rdso小于等于12欧姆) z Low Gate Charge (Typical Data:6nC)z Low Reverse transfer capacitances(Typical:2.7pF)z 100% Single Pulse avalanche energy Test VDSS 600 VID 1.0 APD (TC=25?) 30 WRDS(ONMax. 12
Featuresn Wide 5V to 32V Input Voltage Rangen Output Adjustable from 0.8V to 30Vn Maximum Duty Cycle 100%n Minimum Drop Out 0.6Vn Fixed 300KHz Switching Frequencyn 12A Constant Output Current Capabilityn Internal Optimize Power MOSFETn High efficiencyn Excellent line and load regulationn Built in thermal shutdown functionn Built in current limit functionn Built in output short protection functionn Available in TO-220 package