供应 场效应管 2SJ380,J380
| 价 格： | 面议 | |
| 型号/规格： | 2SJ380\tTO-220F\tTOSHIBA\tDIP/MOS\tP场\t-100V\t-12A\t0.21Ω | |
| 品牌/商标： | TOSHIBA（东芝） | |
| 封装形式： | TO-220F | |
| 环保类别： | 无铅环保型 | |
| 安装方式： | 直插式 | |
| 包装方式： | 单件包装 | |
| 功率特征： | 中功率 |
金城微零件，场效应系列
大量现货供应P Channel MOSFET/P沟通场效应管,品牌SANYO/三洋、TOSHIBA/东芝等原装货，应用于通用开关设备，继电器驱动器，DC-DC转换器和电机驱动器，特点：低导通电阻，4V驱动器，超高速开关，增强模式，雪崩性能强。
2SJ380,TO-220F,DIP/MOS,P场,-100V,-12A,0.21Ω
产品型号:2SJ380
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-π-MOSV)
应用:继电器驱动器，DC-DC转换器和电机驱动器
特点：
* 4V 栅极驱动器
* 低漏源导通电阻: RDS (ON) = 0.15 Ω (typ.)
* 高正向转移导纳: |Yfs| = 7.7 S (typ.)
* 低漏电流: IDSS = -100 μA (max) (VDS = -100 V)
* 增强模式: Vth = -0.8～-2.0 V (VDS = -10 V, ID = -1 mA)
封装:TO-220F
品牌：TOSHIBA/东芝
源漏极间雪崩电压V(br)dss(V):-100
夹断电压VGS(V):±20
漏极电流Id(A):-12
源漏极导通电阻rDS(on)(Ω):0.21 @VGS = 10 V
开启电压VGS(TH)(V):-2
功率PD(W):35
输入电容Ciss(PF):1100 typ.
通道极性:P沟道
低频跨导gFS(s)：7.7
单脉冲雪崩能量EAS(mJ):312
导通延迟时间Td(on)(ns):30 typ.
上升时间Tr(ns):18 typ.
关断延迟时间Td(off)(ns):65 typ.
下降时间Tf(ns):18 typ.
温度(℃): -55 ~150
描述:2SJ380,-100V,-12A,0.21Ω P-沟道增强型场效应晶体管
替换型号：
2SJ655,TO-220F,DIP/MOS,P场,-100V,-12A,0.136Ω
2SJ654,TO-220F,SANYO,DIP/MOS,P场,-100V,-8A
2SJ655,TO-220F,SANYO,DIP/MOS,P场,-100V,-12A
2SJ656,TO-220F,SANYO,DIP/MOS,P场,-100V,-18A
2SJ657,TO-220F,SANYO,DIP/MOS,P场,-100V,-25A
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供应 场效应管 TK30A06J3A K30A06J3A
信息内容：TK30A06J3A,TO-220F,DIP/MOS,N场,60V ,30A,0.026Ω 产品型号:TK30A06J3A 封装:TO-220F 品牌：TOSHIBA/东芝 源漏极间雪崩电压V(br)dss(V):60 夹断电压VGS(V):±20 漏极电流Id(A):30 源漏极导通电阻rDS(on)(Ω):0.026 @VGS = 10 V 开启电压VGS(TH)(V):2.5 功率PD(W):25 输入电容Ciss(PF):1950 typ. 通道极性:N沟道 低频跨导gFS(s)：34 单脉冲雪崩能量EAS(mJ):40 导通延迟时间Td(on)(ns):16 typ. 上升时间Tr(ns):4 typ. 关断延迟时间Td(off)(ns):36 typ. 下降时间Tf(ns):48 typ. 温度(℃): -55 ~150 描述:TK30A06J3A 60V,30A N-沟道增强型场效应晶体管 深圳市金城微零件有限公司 地址：深圳市福田区华富路航都大厦13E 经营：各种三极管、场效应管、可控硅、稳压ＩＣ、开关电源IC、肖特基、IGBT等 企业网站:http://www.chinajincheng.com 企业Q Q:4006262666 (产品图片,产品参数,产品PDF,产品Datasheet等产品相关信息在线了解\查询\下载.)
供应 场效应管 ME90P03G ME90P03
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