供应 场效应管 TK30A06J3A K30A06J3A
| 价 格： | 面议 | |
| 型号/规格： | TK30A06J3A | |
| 品牌/商标： | TOSHIBA（东芝） | |
| 封装形式： | TO-220F | |
| 环保类别： | 无铅环保型 | |
| 安装方式： | 直插式 | |
| 包装方式： | 单件包装 | |
| 功率特征： | 大功率 |
TK30A06J3A,TO-220F,DIP/MOS,N场,60V ,30A,0.026Ω
产品型号:TK30A06J3A
封装:TO-220F
品牌：TOSHIBA/东芝
源漏极间雪崩电压V(br)dss(V):60
夹断电压VGS(V):±20
漏极电流Id(A):30
源漏极导通电阻rDS(on)(Ω):0.026 @VGS = 10 V
开启电压VGS(TH)(V):2.5
功率PD(W):25
输入电容Ciss(PF):1950 typ.
通道极性:N沟道
低频跨导gFS(s)：34
单脉冲雪崩能量EAS(mJ):40
导通延迟时间Td(on)(ns):16 typ.
上升时间Tr(ns):4 typ.
关断延迟时间Td(off)(ns):36 typ.
下降时间Tf(ns):48 typ.
温度(℃): -55 ~150
描述:TK30A06J3A 60V,30A N-沟道增强型场效应晶体管
深圳市金城微零件有限公司
地址：深圳市福田区华富路航都大厦13E
经营：各种三极管、场效应管、可控硅、稳压ＩＣ、开关电源IC、肖特基、IGBT等
企业网站:http://www.chinajincheng.com
企业Q Q:4006262666
(产品图片,产品参数,产品PDF,产品Datasheet等产品相关信息在线了解\查询\.)
- 所属城市：广东 深圳
- [联系时请说明来自维库仪器仪表网]
- 联系人： 方小姐/陈小姐/刘小姐/钟小姐
- 电话：0755-82814431/82814432
- 传真：0755-83957820
- 手机：15914096884
- QQ ：
供应 场效应管 ME90P03G ME90P03
信息内容：ME90P03G,SOT-252,SMD/MOS,P场,-30V,-60A,0.0076Ω AP40P03GH,SOT-252,AP/富鼎,SMD/MOS,P场,-30V,-30A,0.028Ω AM50P03-09D,SOT-252,艾柏电子,SMD/MOS,P场,-30V,-61A, AP40P03GH,SOT-252,AP/富鼎,SMD/MOS,P场,-30V,-30A,0.028Ω AOD403,SOT-252,AO,SMD/MOS,P场,-30V,-85,7.6mΩ CMD40P03,SOT-252,SMD/MOS, -30V, -30A, AP4435GH,SOT-252,SMD/MOS,P场,-30V,-40A,0.02Ω ME90P03G,SOT-252,SMD/MOS,P场,-30V,-60A,0.0076Ω 产品型号:ME90P03G 30V P-Channel Enhancement Mode MOSFET 概述: The ME90P03 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where Low-side switching , and low in-line power loss are needed in a very small outline surface mount package. 该ME90P03是P沟道逻辑...
供应 场效应管 AP9972GI 9972GI
信息内容：AP9972GI,TO-220F,DIP/MOS,N场,60V ,35A,0.018Ω CMF30N06L,TO-220F,DIP/MOS,60V ,30A,0.035Ω TK75A06K3,TO-220F,DIP/MOS,N场,60V ,75A,0.0055Ω 2SD2396,TO-220F,DIP/MOS,NPN,60V,3A, TK30A06J3A,TO-220F,DIP/MOS,N场,60V ,30A,0.026Ω TK75A06K3,TO-220F,DIP/MOS,N场,60V ,75A,0.0055Ω AP9972GI,TO-220F,DIP/MOS,N场,60V ,35A,0.018Ω TK75A06K3,TO-220F,DIP/MOS,N场,60V ,75A,0.0055Ω 产品型号:AP9972GI FEATURES: * 栅极电荷 * 单身驱动要求 * 低导通电阻 封装:TO-220F 品牌：AP/富鼎 源漏极间雪崩电压V(br)dss(V):60 夹断电压VGS(V):±25 漏极电流Id(A):35 源漏极导通电阻rDS(on)(Ω):0.018 @VGS = 10 V 开启电压VGS(TH)(V):3 功率PD(W):31.3 输入电容Ciss(PF):3160 typ. 通道极性:N沟道 低频跨导gFS(s)：40 单脉冲雪崩能量EAS(mJ): 导通延迟时间Td(on)(ns):12 typ. 上升时间Tr(ns):37 typ. 关断延迟时间Td(off)(ns):47 typ. 下降时间Tf(ns):59 typ. 温度(℃): -55 ~150 描述:AP9972GI,60V ,35A N-沟道增强型场效应晶体管...
