价 格: | 10.00 | |
是否提供加工定制: | 是 | |
品牌/商标: | ISC | |
型号/规格: | 2SA765 | |
应用范围: | 放大 | |
材料: | 硅(Si) | |
极性: | PNP型 | |
结构: | 平面型 | |
封装形式: | 直插型 | |
封装材料: | 金属封装 |
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min)
·LowCollector Saturation Voltage-
: VCE(sat)= 1.5V(Max.)@ IC= 4A
·Complement to Type 2SC1445
APPLICATIONS
·Designed for general purpose power amplifier applications
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -80 | V |
VCEO | Collector-Emitter Voltage | -80 | V |
VEBO | Emitter-Base Voltage | -6 | V |
IC | Collector Current-Continuous | -6 | A |
PC | Total Power Dissipation @ TC=25℃ | 40 | W |
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= -10mA; IB= 0 | -80 |
|
| V |
V(BR)CBO | Collector-BaseBreakdownVoltage | IC= -1mA; IE= 0 | -80 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= -4A; IB= -0.4A |
|
| -1.5 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= -4A; IB= -0.4A |
|
| -2.0 | V |
ICBO | Collector Cutoff Current | VCB= -80V; IE= 0 |
|
| -10 | μA |
IEBO | Emitter Cutoff Current | VEB= -6V; IC= 0 |
|
| -10 | μA |
hFE | DC Current Gain | IC= -1A; VCE= -4V | 50 |
|
|
|
fT | Current-Gain—Bandwidth Product | IC= -0.5A; VCE= -12V |
| 10 |
| MHz |
"
DESCRIPTION ·Collector-Emitter Sustaining Voltage-: VCEO(SUS)= 400V(Min)·Fast Switching Speed·Low Saturation Voltage APPLICATIONS·Switching regulators·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage 500VVCEOCollector-Emitter Voltage 400VVEBOEmitter-Base Voltage7VICCollector Current-Continuous8AICMCollector Current-Peak16AIBBase Current-Continuous3AIBMBase Current-Peak6APTTotal Power Dissipation@ TC=25℃45WTJJunctionTemperature150℃TstgStorageTemperature Range-55~150℃ ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITVCEO(SUS)Collector-Emitter Sustaining VoltageIC= 0.1A; IB= 0400 VVCE(sat)Collector-Emitter Saturation VoltageIC= 4A; IB= 0.8A 1.0VVBE(sat)Base-Emitter Saturation VoltageIC= 4A; IB= 0.8A 1.5VICBOCollector Cutoff CurrentAt rated Voltag...
iscSilicon PNP Darlington Power TransistorDESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min.)·High DC Current Gain- : hFE= 1000(Min.)@IC= -20A·LowCollector Saturation Voltage-: VCE (sat)= -3.0V(Max.)@IC= -20A·Complement to Type MJ11012 APPLICATIONS·Designed for use as output devices in complementary general purpose amplifier applications. Absolute maximum ratings (Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage -60VVCEOCollector-Emitter Voltage-60VVEBOEmitter-Base Voltage-5VICCollector Current-Continunous -30AICMCollector Current-Peak -50AIBBase Current-Continunous -1APCCollector Power Dissipation@TC=25℃200WTjJunction Temperature200℃TstgStorageTemperature Range-65~+200℃"