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无锡固电ISC 供应2SA765三极管

价 格: 10.00
是否提供加工定制:
品牌/商标:ISC
型号/规格:2SA765
应用范围:放大
材料:硅(Si)
极性:PNP型
结构:平面型
封装形式:直插型
封装材料:金属封装

DESCRIPTION                                             

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -80V(Min)

·LowCollector Saturation Voltage-

: VCE(sat)= 1.5V(Max.)@ IC= 4A

·Complement to Type 2SC1445

 

 

APPLICATIONS

·Designed for general purpose power amplifier applications

 

 

ABSOLUTE MAXIMUM RATINGS(Ta=25)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage                     

-80

V

VCEO

Collector-Emitter Voltage                        

-80

V

VEBO

Emitter-Base Voltage

-6

V

IC

Collector Current-Continuous

-6

A

PC

Total Power Dissipation

@ TC=25

40

W

TJ

JunctionTemperature

150

Tstg

StorageTemperature Range

-55~150

 

ELECTRICAL CHARACTERISTICS

TC=25unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= -10mA; IB= 0

-80

 

 

V

V(BR)CBO

Collector-BaseBreakdownVoltage

IC= -1mA; IE= 0

-80

 

 

V

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -4A; IB= -0.4A

 

 

-1.5

V

VBE(sat)

Base-Emitter Saturation Voltage

IC= -4A; IB= -0.4A

 

 

-2.0

V

ICBO

Collector Cutoff Current

VCB= -80V; IE= 0

 

 

-10

μA

IEBO

Emitter Cutoff Current

VEB= -6V; IC= 0

 

 

-10

μA

hFE

DC Current Gain

IC= -1A; VCE= -4V

50

 

 

 

fT

Current-Gain—Bandwidth Product

IC= -0.5A; VCE= -12V

 

10

 

MHz

 

 

"

无锡固电半导体股份有限公司
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