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无锡固电ISC供应2SC4834 三极管 达林顿三极管 可控硅三极管

价 格: 3.80
是否提供加工定制:
品牌/商标:ISC
型号/规格:2SC4834
应用范围:放大
材料:硅(Si)
极性:NPN型
结构:平面型
封装形式:直插型
封装材料:塑料封装

DESCRIPTION                                           

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= 400V(Min)

·Fast Switching Speed

·Low Saturation Voltage

 

APPLICATIONS

·Switching regulators

·General purpose power amplifiers

 

ABSOLUTE MAXIMUM RATINGS(Ta=25)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage                     

500

V

VCEO

Collector-Emitter Voltage                        

400

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

8

A

ICM

Collector Current-Peak

16

A

IB

Base Current-Continuous

3

A

IBM

Base Current-Peak

6

A

PT

Total Power Dissipation

@ TC=25

45

W

TJ

JunctionTemperature

150

Tstg

StorageTemperature Range

-55~150

 

ELECTRICAL CHARACTERISTICS

TC=25unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 0.1A; IB= 0

400

 

 

V

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 4A; IB= 0.8A

 

 

1.0

V

VBE(sat)

Base-Emitter Saturation Voltage

IC= 4A; IB= 0.8A

 

 

1.5

V

ICBO

Collector Cutoff Current

At rated Voltage

 

 

100

μA

ICEO

Collector Cutoff Current

At rated Voltage

 

 

100

μA

IEBO

Emitter Cutoff Current

At rated Voltage

 

 

100

μA

hFE-1

DC Current Gain

IC= 4A; VCE= 2V

10

 

25

 

hFE-2

DC Current Gain

IC= 1mA; VCE= 2V

10

 

 

 

fT

Current-Gain—Bandwidth Product

IC= 0.8A; VCE= 10V

 

13

 

MHz

Switching times

ton

Turn-on Time

IC= 4A; IB1=0.8A; IB2= -1.6A;

RL= 37.5Ω; VBB2= 4V

 

 

0.3

μs

tstg

Storage Time

 

 

1.3

μs

tf

Fall Time

 

 

0.1

μs

 

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

2.78

/W

 

无锡固电半导体股份有限公司
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