无锡固电供应ISC三极管MJ11011
| 价 格： | 20.00 | |
| 是否提供加工定制： | 是 | |
| 品牌/商标： | ISC | |
| 型号/规格： | MJ11011 | |
| 应用范围： | 达林顿 | |
| 材料： | 硅(Si) | |
| 极性： | PNP型 | |
| 击穿电压VCBO： | 60（V） | |
| 集电极允许电流ICM： | 30（A） | |
| 集电极耗散功率PCM： | 200（W） | |
| 结构： | 平面型 | |
| 封装形式： | TO-3 | |
| 封装材料： | 塑料封装 |
iscSilicon PNP Darlington Power Transistor
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min.)
·High DC Current Gain-
: hFE= 1000(Min.)@IC= -20A
·LowCollector Saturation Voltage-
: VCE (sat)= -3.0V(Max.)@IC= -20A
·Complement to Type MJ11012
APPLICATIONS
·Designed for use as output devices in complementary
general purpose amplifier applications.
Absolute maximum ratings (Ta=25℃)
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -60 | V |
VCEO | Collector-Emitter Voltage | -60 | V |
VEBO | Emitter-Base Voltage | -5 | V |
IC | Collector Current-Continunous | -30 | A |
ICM | Collector Current-Peak | -50 | A |
IB | Base Current-Continunous | -1 | A |
PC | Collector Power Dissipation @TC=25℃ | 200 | W |
Tj | Junction Temperature | 200 | ℃ |
Tstg | StorageTemperature Range | -65~+200 | ℃ |
- 所属城市：江苏 无锡
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