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无锡固电ISC 供应2SD1789三极管

价 格: 3.00
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品牌/商标:ISC
型号/规格:2SD1789
应用范围:达林顿
材料:硅(Si)
极性:NPN型
集电极允许电流ICM:4(A)
集电极耗散功率PCM:25(W)
截止频率fT:20(MHz)
结构:平面型
封装形式:直插型
封装材料:塑料封装

ITO-220供应2SD1789三极管有意者请联系!

DESCRIPTION          

·Collector-Emitter Sustaining Voltage-

  : VCEO(SUS)= 200V (Min.)

·High Switching Speed

 

APPLICATIONS

·Designed for audio frequency power amplifier and low

  speed high current switching industrial use.

 

Absolute maximum ratings (Ta=25)

SYMBOL

PARAMETER

VALUE

UNIT

VCEO

Collector-Emitter Voltage  

200

V

VCBO

Collector-Base Voltage

200

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continunous  

4

A

ICM

Collector Current-Peak

6

A

IB

Base Current-Continunous  

0.3

A

IBM

Base Current-Peak  

0.5

A

PC

Collector Power Dissipation

@TC=25

25

W

Tj

Junction Temperature

150

Tstg

StorageTemperature Range

-55~150

ELECTRICAL CHARACTERISTICS

TC=25unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 50mA; IB= 0

200

 

 

V

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 1A; IB= 2mA

 

 

1.5

V

VBE(sat)

Base-Emitter Saturation Voltage

IC= 1A; IB= 2mA

 

 

2.0

V

ICBO

Collector Cutoff Current

VCB= 200V; IE= 0

 

 

0.1

mA

ICEO

Collector Cutoff Current

VCE= 200V; IB= 0

 

 

0.1

mA

IEBO

Emitter Cutoff Current

VEB= 7V; IC= 0

 

 

5

mA

hFE

DC Current Gain

IC= 1A, VCE= 3V

1500

 

30000

 

fT

Current-Gain—Bandwidth Product

IC= 0.4A ; VCE= 10V

 

20

 

MHz

Switching Times; Resistive Load

ton

Turn-On Time

IC= 1A;IB1= -IB2= 2mA

VBB2= 4V; RL= 25Ω

 

 

2

μs

ts

Storage Time

 

 

12

μs

tf

Fall Time

 

 

5

μs

无锡固电半导体股份有限公司
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