无锡固电ISC 供应达林顿三极管MJ11015
| 价 格： | 12.00 | |
| 是否提供加工定制： | 是 | |
| 品牌/商标： | ISC | |
| 型号/规格： | MJ11015 | |
| 应用范围： | 达林顿 | |
| 材料： | 硅(Si) | |
| 极性： | PNP型 | |
| 集电极允许电流ICM： | -30（A） | |
| 集电极耗散功率PCM： | 200（W） | |
| 结构： | 平面型 | |
| 封装形式： | 直插型 | |
| 封装材料： | 塑料封装 |
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min.)
·High DC Current Gain-
: hFE= 1000(Min.)@IC= -20A
·LowCollector Saturation Voltage-
: VCE (sat)= -3.0V(Max.)@IC= -20A
·Complement to Type MJ11016
APPLICATIONS
·Designed for use as output devices in complementary
general purpose amplifier applications.
Absolute maximum ratings (Ta=25℃)
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -120 | V |
VCEO | Collector-Emitter Voltage | -120 | V |
VEBO | Emitter-Base Voltage | -5 | V |
IC | Collector Current-Continunous | -30 | A |
IB | Base Current-Continunous | -1 | A |
PC | Collector Power Dissipation @TC=25℃ | 200 | W |
Tj | Junction Temperature | 200 | ℃ |
Tstg | StorageTemperature Range | -55~+200 | ℃ |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= -0.1A; IB= 0 | -120 |
|
| V |
VCE(sat)-1 | Collector-Emitter Saturation Voltage | IC= -20A; IB= -0.2A |
|
| -3.0 | V |
VCE(sat)-2 | Collector-Emitter Saturation Voltage | IC= -30A; IB= -0.3A |
|
| -4.0 | V |
VBE(sat)-1 | Base-Emitter Saturation Voltage | IC= -20A; IB= -0.2A |
|
| -3.5 | V |
VBE(sat)-2 | Base-Emitter Saturation Voltage | IC= -30A; IB= -0.3A |
|
| -5.0 | V |
ICER | Collector Cutoff Current | VCE=-120V; RBE=1kΩ VCE=-120V; RBE=1kΩ; TC=150℃ |
|
| -1.0 -5.0 | mA |
ICEO | Collector Cutoff Current | VCE= -50V; IB= 0 |
|
| -1.0 | mA |
IEBO | Emitter Cutoff Current | VEB= -5V; IC= 0 |
|
| -5.0 | mA |
hFE-1 | DC Current Gain | IC= -20A, VCE= -5V | 1000 |
|
|
|
hFE-2 | DC Current Gain | IC= -30A, VCE= -5V | 200 |
|
|
|
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- 联系人： 谈增琴
- 电话：0510-85346980
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