无锡固电ISC 供应BD649 三极管 普通可控硅三极管 增强型MSO管
| 价 格： | 2.30 | |
| 是否提供加工定制： | 是 | |
| 品牌/商标： | ISC | |
| 型号/规格： | BD649 | |
| 应用范围： | 达林顿 | |
| 材料： | 硅(Si) | |
| 极性： | NPN型 | |
| 集电极允许电流ICM： | 8（A） | |
| 集电极耗散功率PCM： | 62.5（W） | |
| 结构： | 平面型 | |
| 封装形式： | 直插型 | |
| 封装材料： | 塑料封装 |
TO-220三极管有意者请联系!
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min)
·High DC Current Gain
: hFE= 750(Min) @IC= 3A
·Low Saturation Voltage
·Complement to Type BD650
APPLICATIONS
·Designed for use as complementary AF push-pull output
stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 120 | V |
VCEO | Collector-Emitter Voltage | 100 | V |
VEBO | Emitter-Base Voltage | 5 | V |
IC | Collector Current-Continuous | 8 | A |
ICP | Collector Current-Peak | 12 | A |
IB | Base Current-Continuous | 0.3 | A |
PC | Collector Power Dissipation @ Ta=25℃ | 2 | W |
Collector Power Dissipation @ TC=25℃ | 62.5 | ||
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -65~150 | ℃ |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
VCEO(SUS) | Collector-Emitter Breakdown Voltage | IC= 30mA; IB= 0 | 100 |
|
| V |
VCE(sat)-1 | Collector-Emitter Saturation Voltage | IC= 3A; IB= 12mA |
|
| 2.0 | V |
VCE(sat)-2 | Collector-Emitter Saturation Voltage | IC= 5A; IB= 50mA |
|
| 2.5 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= 5A; IB= 50mA |
|
| 3.0 | V |
VBE(on) | Base-Emitter On Voltage | IC= 3A ; VCE= 3V |
|
| 2.5 | V |
ICBO | Collector Cutoff Current | VCB= 100V; IE= 0 |
|
| 0.2 | mA |
VCB= 60V; IE= 0; TC= 150℃ | 2.0 | |||||
ICEO | Collector Cutoff Current | VCE= 50V; IB= 0 |
|
| 0.5 | mA |
IEBO | Emitter Cutoff Current | VEB= 5V; IC= 0 |
|
| 5 | mA |
hFE | DC Current Gain | IC= 3A ; VCE= 3V | 750 |
|
|
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- 所属城市：江苏 无锡
- [联系时请说明来自维库仪器仪表网]
- 联系人： 谈增琴
- 电话：0510-85346980
- 传真：0510-85346750
- 手机：
- QQ ：
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