价 格: | 10.00 | |
是否提供加工定制: | 是 | |
品牌/商标: | ISC/ISCSEMI | |
型号/规格: | MJ15003 | |
应用范围: | 达林顿 | |
材料: | 硅(Si) | |
极性: | NPN型 | |
集电极允许电流ICM: | 20(A) | |
集电极耗散功率PCM: | 250(W) | |
截止频率fT: | 2(MHz) | |
结构: | 点接触型 | |
封装形式: | TO-3 | |
封装材料: | 金属封装 |
DESCRIPTION
·High DC Current Gain-
: hFE= 25(Min)@IC= 5A
·Wide Area of Safe Operation
·Complement to Type MJ15004
APPLICATIONS
·Designed for high power audio,disk head positioners and
other linear applications.
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 140 | V |
VCEO | Collector-Emitter Voltage | 140 | V |
VEBO | Emitter-Base Voltage | 5 | V |
IC | Collector Current-Continuous | 20 | A |
IB | Base Current-Continuous | 5 | A |
IE | Emitter Current-Continuous | -25 | A |
PD | Total Power Dissipation@TC=25℃ | 250 | W |
Tj | Junction Temperature | 200 | ℃ |
Tstg | Storage Temperature | -65~200 | ℃ |
ELECTRICAL CHARACTERISTICS
Tj=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | MAX | UNIT |
VCEO(SUS) | Collector-Emitter Sustaining Voltage | IC= 0.2A ;IB= 0 | 140 |
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 5A; IB= 0.5A |
| 1 | V |
VBE(on) | Base-Emitter On Voltage | IC= 5A ; VCE= 2V |
| 2 | V |
ICEO | Collector Cutoff Current | VCE= 140V; IB= 0 |
| 0.25 | mA |
ICEX | Collector Cutoff Current | VCE= 140V; VBE(OFF)= 1.5V VCE= 140V; VBE(OFF)= 1.5V;TC= 150℃ |
| 0.1 2.0 | mA |
IEBO | Emitter Cutoff Current | VEB= 5V; IC= 0 |
| 0.1 | mA |
hFE | DC Current Gain | IC= 5A ; VCE= 2V | 25 | 150 |
|
Is/b | Second Breakdown Collector Current with Base Forward Biased | VCE= 50V,t= 1s, Nonrepetitive | 5 |
| A |
VCE= 100V,t= 1s, Nonrepetitive | 1 | ||||
COB | Output Capacitance | IE= 0 ; VCB= 10V;ftest= 1.0MHz |
| 1000 | pF |
fT | Current-Gain—Bandwidth Product | IC= 0.5A ; VCE= 10V;ftest= 0.5MHz | 2 |
| MHz |
TO-220三极管有意者请联系!DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min)·High DC Current Gain : hFE= 750(Min) @IC= 3A·Low Saturation Voltage·Complement to Type BD650 APPLICATIONS·Designed for use as complementary AF push-pull outputstage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage 120VVCEOCollector-Emitter Voltage 100VVEBOEmitter-Base Voltage5VICCollector Current-Continuous8AICPCollector Current-Peak12AIBBase Current-Continuous 0.3APCCollector Power Dissipation@ Ta=25℃2WCollector Power Dissipation@ TC=25℃62.5TJJunctionTemperature150℃TstgStorageTemperature Range-65~150℃ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITVCEO(SUS)Collector-Emitter Breakdown VoltageIC= 30mA; IB= 0100 VVCE(sat)-1Collector-Emitter Saturation VoltageIC= ...
DESCRIPTION ·Collector-Emitter Sustaining Voltage-:VCEO(SUS)= 180V(Min)·High Switching Speed·Low Collector Saturation Voltage-: VCE(sat)= 1.0V(Max)@ IC= 10A APPLICATIONS·Designed for use in industrial-military power amplifier andswitching circuit applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage180VVCEOCollector-Emitter Voltage180VVEBOEmitter-Base Voltage7VICCollector Current-Continuous30AICMCollector Current-Peak50AIBBase Current-Continuous10APCCollector Power Dissipation @TC=25℃250WTJJunction Temperature200℃TstgStorage Temperature-65~200℃ THERMAL CHARACTERISTICSSYMBOLPARAMETERMAXUNITRth j-cThermal Resistance,Junction to Case0.875℃/W ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINMAXUNITVCEO(SUS)Collector-Emitter Sustaining VoltageIC= 50mA; IB= 0150 VVCE(sat)-1Collector-Emitter Saturation VoltageIC= 10A; IB= 1A 1.0VVCE(...