Item | Unit | Sepcification | Remarks |
Crystal Growth | VGF HB VB | ||
Dopant | Si or Zn or un | N-te/ P-te/ un | |
Diameter | 1” 2” 3” 4” 6” | ||
Orientation | (100) (111) | Other orientation available | |
Carrier Concentration | /cm3 | 0.4~2.5*1018 | Other spec. available |
Resisitivity | Ohm.cm | (0.8-9)×10-3 (1-9)×1017 | Other spec. available |
Mobility | cm2/v.s | 1500~3000 3000~5000 | Other spec. available |
EPD | /cm2 | <100 <500<> <5000 <10000<> | Other spec. available |
Thickness | ~350um ~625um | Other spec. available | |
TTV | um | <10um or better | |
TIR | um | <10um or better | |
Bow | um | <10um or better | |
Warp | um | <10um or better | |
Surface | PE PP | ||
Epi-ready | Yes |
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