价 格: | 1.00 | |
型号/规格: | KBP208G | |
品牌/商标: | HY | |
封装形式: | KBY | |
环保类别: | 无铅环保型 | |
安装方式: | 直插式 | |
包装方式: | 散装 | |
功率特性: | 小功率 | |
频率特性: | 低频 | |
整流电流: | 2.0 | |
反向击穿电流: | 10.0 |
FEATURES
●Surge overload rating -60 amperes peak
●Ideal for printed circuit board
●Plastic material has UL
flammability classification 94V-0
●Mounting position :Any
REVERSE VOLTAGE - 50 to 1000Volts
FORWARD CURRENT - 2.0 Amperes
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MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Resistive or inductive load,60HZ.
For capacitive load, derate current by 20%
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MURB1620CTR Preferred Device SWITCHMODE Power Rectifier These state漢昀琢栀攀愢爀琀 devices are designed for use in negative switching power supplies, inverters and as free wheeling diodes. Also, used in conjunction with common cathode dual Ultrafast Rectifiers, makes a single phase full眢愀瘀攀 bridge. Features Common Anode Dual Rectifier (8.0 A per Leg or 16 A per Package) Ultrafast 35 Nanosecond Reverse Recovery Times Exhibits Soft Recovery Characteristics High Temperature Glass Passivated Junction Low Leakage Specified @ 150°C Case Temperature Current Derating @ Both Case and Ambient Temperatures Epoxy Meets UL 94 V〢 @ 0.125 in Complement to MUR1620CT and MURB1620CT Common Cathode Device PbFree Packages are Available Mechanical Characteristics: Case: Epoxy, Molded Weight: MUR1620CTR: 1.9 Grams (Approximately) MURB1620CTR: 1.7 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable ...
主要应用领域:电动车控制器,逆变器,汽车安定器 Silicon N-Channel Power MOSFET CS75N75 C8H General Description: CS75N75 C8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard. Features: 竛 Fast Switching 竛 Low ON Resistance(Rdson≤18mΩ) 竛 Low Gate Charge (Typical Data:33.3nC) 竛 Low Reverse transfer capacitances(Typical:115pF) 竛 100% Single Pulse avalanche energy Test