供应场效应管75NF75
| 价 格： | 1.00 | |
| 型号/规格： | 75NF75 | |
| 品牌/商标： | 华晶 | |
| 封装形式： | TO-220 | |
| 环保类别： | 无铅环保型 | |
| 安装方式： | 直插式 | |
| 包装方式： | 管装 | |
| 功率特征： | 中功率 |
主要应用领域：电动车控制器，逆变器，汽车安定器
Silicon N-Channel Power MOSFET
CS75N75 C8H
General Description：
CS75N75 C8H, the silicon N-channel Enhanced VDMOSFETs,
is obtained by the self-aligned planar Technology which reduce
the conduction loss, improve switching performance and
enhance the avalanche energy. The transistor can be used in
various power switching circuit for system miniaturization and
higher efficiency. The package form is TO-220AB, which accords
with the RoHS standard.
Features：
竛 Fast Switching
竛 Low ON Resistance(Rdson≤18mΩ)
竛 Low Gate Charge (Typical Data:33.3nC)
竛 Low Reverse transfer capacitances(Typical:115pF)
竛 100% Single Pulse avalanche energy Test
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- 联系人： 田先生\刘小姐
- 电话：021-38046966
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- 手机：18964366969
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供应场效应管CS1N60A3
信息内容：主要应用领域：小功率充电器 Silicon N-Channel Power MOSFET CS1N60A3H General Description： CS1N60A3H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the RoHS standard. Features： 竛 Fast Switching 竛 Low ON Resistance(Rdson≤15Ω) 竛 Low Gate Charge (Typical Data:5.0nC) 竛 Low Reverse transfer capacitances(Typical:2.7pF) 竛 100% Single Pulse avalanche energy Test
供应场效应管CS90N03B4
信息内容：90A 25V TO-252 MOSFET 应用领域：电动车控制器，逆变器，汽车安定器 General Description： CS90N03 B4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS standard. Features： TrenchFET Power MOSFET Low ON Resistance(Rdson≤8mΩ) Low Gate Charge (Typical Data:17nC) VDSS 25 V ID 80 A PD(TC=25℃) 80 W RDS(ON) 6.8 mΩ Low Reverse transfer capacitances(Typical:70pF) 100% Single Pulse avalanche energy Test
