供应场效应管CS1N60A3
| 价 格： | 1.00 | |
| 型号/规格： | CS1N60A3 | |
| 品牌/商标： | 华晶 | |
| 封装形式： | TO-220 | |
| 环保类别： | 无铅环保型 | |
| 安装方式： | 直插式 | |
| 包装方式： | 管装 | |
| 功率特征： | 中功率 |
主要应用领域：小功率充电器
Silicon N-Channel Power MOSFET
CS1N60A3H
General Description：
CS1N60A3H, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-251,
which accords with the RoHS standard.
Features：
竛 Fast Switching
竛 Low ON Resistance(Rdson≤15Ω)
竛 Low Gate Charge (Typical Data:5.0nC)
竛 Low Reverse transfer capacitances(Typical:2.7pF)
竛 100% Single Pulse avalanche energy Test
- 所属城市：上海 上海市
- [联系时请说明来自维库仪器仪表网]
- 联系人： 田先生\刘小姐
- 电话：021-38046966
- 传真：021-38840019
- 手机：18964366969
- QQ ：
供应场效应管CS90N03B4
信息内容：90A 25V TO-252 MOSFET 应用领域：电动车控制器，逆变器，汽车安定器 General Description： CS90N03 B4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS standard. Features： TrenchFET Power MOSFET Low ON Resistance(Rdson≤8mΩ) Low Gate Charge (Typical Data:17nC) VDSS 25 V ID 80 A PD(TC=25℃) 80 W RDS(ON) 6.8 mΩ Low Reverse transfer capacitances(Typical:70pF) 100% Single Pulse avalanche energy Test
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