供应华晶场效应管CS2N60B3D
| 价 格： | 1.00 | |
| 型号/规格： | CS2N60B3D | |
| 品牌/商标： | 华晶 | |
| 封装形式： | TO-220 | |
| 环保类别： | 无铅环保型 | |
| 安装方式： | 直插式 | |
| 包装方式： | 管装 | |
| 功率特征： | 中功率 |
主要应用领域：小功率充电器，PC电源辅助电源
Silicon N-Channel Power MOSFET
CS2N60B3D
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10 2011
General Description：
CS2N60B3D, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-251,
which accords with the RoHS standard.
Features：
Fast Switching
ESD Improved Capability
Low Gate Charge (Typical Data:7.5nC)
Low Reverse transfer capacitances(Typical:5.0pF)
100% Single Pulse avalanche energy Test
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供应场效应管CSZ44V
信息内容：产品主要应用领域：小功率充电器，PC电源辅助电源，电源适配器，隔离式的LED驱动，电动车充电器，LCD电源 应用领域：电动车控制器，逆变器，汽车安定器 Silicon N-Channel Power MOSFET CSZ44V General Description： VDSS 60 V ID 55 A PD(TC=25℃) 130 W RDS(ON) 0.018 Ω CSZ44V, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard. Features： Fast Switching Low ON Resistance(Rdson≤18mΩ) Low Gate Charge (Typical Data:33.3nC) Low Reverse transfer capacitances(Typical:115pF) 100% Single Pulse avalanche energy Test
供应华晶场效应管CS3N50B3
信息内容：应用领域：电子镇流器，车载逆变器，非隔离式的LED驱动，汽车安定器 Silicon N-Channel Power MOSFET CS3N50B3 General Description： VDSS 500 V ID 3 A PD (TC=25℃) 35 W RDS(ON) 2.8 Ω CS3N50B3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the RoHS standard. Features： Fast Switching Low ON Resistance(Rdson≤3.0Ω) Low Gate Charge (Typical Data:9.5nC) Low Reverse transfer capacitances(Typical:3.8pF) 100% Single Pulse avalanche energy Test
