供应场效应管CSZ44V
| 价 格： | 1.00 | |
| 型号/规格： | CSZ44V | |
| 品牌/商标： | 华晶 | |
| 封装形式： | T0-220AB | |
| 环保类别： | 无铅环保型 | |
| 安装方式： | 直插式 | |
| 包装方式： | 管装 | |
| 功率特征： | 中功率 |
产品主要应用领域：小功率充电器，PC电源辅助电源，电源适配器，隔离式的LED驱动，电动车充电器，LCD电源
应用领域：电动车控制器，逆变器，汽车安定器
Silicon N-Channel Power MOSFETCSZ44V
General Description：
VDSS
60
V
ID
55
A
PD(TC=25℃)
130
W
RDS(ON)
0.018
Ω
CSZ44V, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and
higher efficiency. The package form is TO-220AB, which accords with the RoHS standard.
Features：
Fast Switching
Low ON Resistance(Rdson≤18mΩ)
Low Gate Charge (Typical Data:33.3nC)
Low Reverse transfer capacitances(Typical:115pF)
100% Single Pulse avalanche energy Test
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- 电话：021-38046966
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供应华晶场效应管CS3N50B3
信息内容：应用领域：电子镇流器，车载逆变器，非隔离式的LED驱动，汽车安定器 Silicon N-Channel Power MOSFET CS3N50B3 General Description： VDSS 500 V ID 3 A PD (TC=25℃) 35 W RDS(ON) 2.8 Ω CS3N50B3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the RoHS standard. Features： Fast Switching Low ON Resistance(Rdson≤3.0Ω) Low Gate Charge (Typical Data:9.5nC) Low Reverse transfer capacitances(Typical:3.8pF) 100% Single Pulse avalanche energy Test
供应华晶场效应管CS1N60C1H
信息内容：主要应用领域：手机充电器 Silicon N-Channel Power MOSFET CS1N60C1H General Description： VDSS 600 V ID 1.2 A PD (TC=25℃) 3 W RDS(ON) 9 Ω CS1N60C1H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-92, which accords with the RoHS standard. Features： Fast Switching Low ON Resistance(Rdson≤10.5Ω) Low Gate Charge (Typical Data:6.0nC) Low Reverse transfer capacitances(Typical:4pF) 100% Single Pulse avalanche energy Test
