供应华晶场效应管CS3N50B3
| 价 格： | 1.00 | |
| 型号/规格： | CS3N50B3 | |
| 品牌/商标： | 华晶 | |
| 封装形式： | TO-220 | |
| 环保类别： | 无铅环保型 | |
| 安装方式： | 直插式 | |
| 包装方式： | 管装 | |
| 功率特征： | 中功率 |
应用领域：电子镇流器，车载逆变器，非隔离式的LED驱动，汽车安定器
Silicon N-Channel Power MOSFET
CS3N50B3
General Description：
VDSS
500
V
ID
3
A
PD (TC=25℃)
35
W
RDS(ON)
2.8
Ω
CS3N50B3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the RoHS standard.
Features：
Fast Switching
Low ON Resistance(Rdson≤3.0Ω)
Low Gate Charge (Typical Data:9.5nC)
Low Reverse transfer capacitances(Typical:3.8pF)
100% Single Pulse avalanche energy Test
- 所属城市：上海 上海市
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- 联系人： 田先生\刘小姐
- 电话：021-38046966
- 传真：021-38840019
- 手机：18964366969
- QQ ：
供应华晶场效应管CS1N60C1H
信息内容：主要应用领域：手机充电器 Silicon N-Channel Power MOSFET CS1N60C1H General Description： VDSS 600 V ID 1.2 A PD (TC=25℃) 3 W RDS(ON) 9 Ω CS1N60C1H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-92, which accords with the RoHS standard. Features： Fast Switching Low ON Resistance(Rdson≤10.5Ω) Low Gate Charge (Typical Data:6.0nC) Low Reverse transfer capacitances(Typical:4pF) 100% Single Pulse avalanche energy Test
供应华晶场效应管CS1N60C1HD
信息内容：主要应用领域：手机充电器 Silicon N-Channel Power MOSFET CS1N60C1HD General Description： VDSS 600 V ID 1.5 A PD (TC=25℃) 3 W RDS(ON) 7.0 Ω CS1N60C1HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-92, which accords with the RoHS standard. Features： Fast Switching ESD Improved Capability Low Gate Charge (Typical Data:7.5nC) Low Reverse transfer capacitances(Typical:5.0pF) 100% Single Pulse avalanche energy Test
