供应华晶场效应管CS1N60C1HD
| 价 格： | 1.00 | |
| 型号/规格： | CS1N60C1HD | |
| 品牌/商标： | 华晶 | |
| 封装形式： | TO-220 | |
| 环保类别： | 无铅环保型 | |
| 安装方式： | 直插式 | |
| 包装方式： | 管装 | |
| 功率特征： | 中功率 |
主要应用领域：手机充电器
Silicon N-Channel Power MOSFET
CS1N60C1HD
General Description：
VDSS
600
V
ID
1.5
A
PD (TC=25℃)
3
W
RDS(ON)
7.0
Ω
CS1N60C1HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-92, which accords with the RoHS standard.
Features：
Fast Switching
ESD Improved Capability
Low Gate Charge (Typical Data:7.5nC)
Low Reverse transfer capacitances(Typical:5.0pF)
100% Single Pulse avalanche energy Test
- 所属城市：上海 上海市
- [联系时请说明来自维库仪器仪表网]
- 联系人： 田先生\刘小姐
- 电话：021-38046966
- 传真：021-38840019
- 手机：18964366969
- QQ ：
供应华晶场效应管CS4N60A3HD
信息内容：主要应用领域：电源适配器，隔离式的LED驱动，LCD电源 Silicon N-Channel Power MOSFET CS4N60A3HD General Description： VDSS 600 V ID 4 A PD(TC=25℃) 55 W RDS(ON) 1.9 Ω CS4N60A3HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the RoHS standard. Features： Fast Switching ESD Improved Capability Low Gate Charge (Typical Data: 18nC) Low Reverse transfer capacitances(Typical: 14pF) 100% Single Pulse avalanche energy Test
供应二极管整流桥KBP208G
信息内容：FEATURES ●Surge overload rating -60 amperes peak ●Ideal for printed circuit board ●Plastic material has UL flammability classification 94V-0 ●Mounting position :Any REVERSE VOLTAGE - 50 to 1000Volts FORWARD CURRENT - 2.0 Amperes dzsc/19/4283/19428307.jpg MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25℃ ambient temperature unless otherwise specified. Resistive or inductive load,60HZ. For capacitive load, derate current by 20% dzsc/19/4283/19428307.jpg
