供应场效应管CS4N60A4HD
| 价 格： | 1.00 | |
| 型号/规格： | CS4N60A4HD | |
| 品牌/商标： | 华晶 | |
| 封装形式： | TO-220 | |
| 环保类别： | 无铅环保型 | |
| 安装方式： | 贴片式 | |
| 包装方式： | 卷带编带包装 | |
| 功率特征： | 中功率 |
主要应用领域：小功率充电器，PC电源辅助电源
Silicon N-Channel Power MOSFET
CS4N60A4HD
General Description：
VDSS
600
V
ID
4
A
PD(TC=25℃)
55
W
RDS(ON)
1.9
Ω
CS4N60A4HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS standard.
Features：
竛 Fast Switching
竛 ESD Improved Capability
竛 Low Gate Charge (Typical Data: 18nC)
竛 Low Reverse transfer capacitances(Typical: 14pF)
竛 100% Single Pulse avalanche energy Test
- 所属城市：上海 上海市
- [联系时请说明来自维库仪器仪表网]
- 联系人： 田先生\刘小姐
- 电话：021-38046966
- 传真：021-38840019
- 手机：18964366969
- QQ ：
供应场效应管DMOS管CS730A8H
信息内容：6A 75V TO-220AB MOSFET 应用领域：电子镇流器，车载逆变器，非隔离式的LED驱动 General Description： VDSS 400 V ID 6 A PD(TC=25℃) 75 W RDS(ON) 0.88 Ω CS730A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard. Features： Fast Switching Low ON Resistance(Rdson≤1Ω) Low Gate Charge (Typical Data:17nC) Low Reverse transfer capacitances(Typical:8.3pF) 100% Single Pulse avalanche energy Test
供应场效应管DMOS管CS730A8H
信息内容：6A 75V TO-220AB MOSFET 应用领域：电子镇流器，车载逆变器，非隔离式的LED驱动 Silicon N-Channel Power MOSFET CS730A8H General Description： VDSS 400 V ID 6 A PD(TC=25℃) 75 W RDS(ON) 0.88 Ω CS730A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard. Features： Fast Switching Low ON Resistance(Rdson≤1Ω) Low Gate Charge (Typical Data:17nC) Low Reverse transfer capacitances(Typical:8.3pF) 100% Single Pulse avalanche energy Test
