主要应用领域:电动车控制器,逆变器,汽车安定器
Silicon N-Channel Power MOSFET
CS3410B4
General Description:
CS3410B4, the silicon N-channel Enhanced VDMOSFETs, is
obtained by the self-aligned planar Technology which reduce the
conduction loss, improve switching performance and enhance the
avalanche energy. The transistor can be used in various power
switching circuit for system miniaturization and higher efficiency.
The package form is TO-252, which accords with the RoHS standard.
Features:
Fast Switching
Low ON Resistance(Rdson≤0.1Ω)
Low Gate Charge (Typical Data:34nC)
Low Reverse transfer capacitances(Typical:90PF)
100% Single Pulse avalanche energy Test
CS4N60A8HD为内部集成抗静电防护功能的产品,主要应用领域,小功率充电器,PC电源辅助电源 Silicon N-Channel Power MOSFET CS4N60A8H General Description: VDSS 600 V ID 4 A PD(TC=25℃) 75 W RDS(ON) 1.9 Ω CS4N60A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard. Features: 竛 Fast Switching 竛 Low ON Resistance(Rdson≤2.3Ω) 竛 Low Gate Charge (Typical Data: 18nC) 竛 Low Reverse transfer capacitances(Typical: 14pF) 竛 100% Single Pulse avalanche energy Test
主要应用领域:低压电子镇流器,电视机枕校 Silicon N-Channel Power MOSFET CS640A8H General Description CS640A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220, which accords with the RoHS standard. Features 竛 Fast Switching 竛 Low ON Resistance(Rdso凛ホ 竛 Low Gate Charge (Typical Data:24nC) 竛 Low Reverse transfer capacitances(Typical:25pF) 竛 100% Single Pulse avalanche energy Test