供应场效应管CS4N60A8H
| 价 格： | 1.00 | |
| 型号/规格： | CS4N60A8H | |
| 品牌/商标： | 华晶 | |
| 封装形式： | TO-220 | |
| 环保类别： | 无铅环保型 | |
| 安装方式： | 直插式 | |
| 包装方式： | 管装 | |
| 功率特征： | 中功率 |
CS4N60A8HD为内部集成抗静电防护功能的产品，主要应用领域，小功率充电器，PC电源辅助电源
Silicon N-Channel Power MOSFET
CS4N60A8H
General Description：
VDSS
600
V
ID
4
A
PD(TC=25℃)
75
W
RDS(ON)
1.9
Ω
CS4N60A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard.
Features：
竛 Fast Switching
竛 Low ON Resistance(Rdson≤2.3Ω)
竛 Low Gate Charge (Typical Data: 18nC)
竛 Low Reverse transfer capacitances(Typical: 14pF)
竛 100% Single Pulse avalanche energy Test
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- 联系人： 田先生\刘小姐
- 电话：021-38046966
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供应场效应管CS640A8H
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供应场效应管CS20N60ANH
信息内容：应用领域：电子镇流器，车载逆变器，非隔离式的LED驱动，汽车安定器 Silicon N-Channel Power MOSFET CS20N60ANH General Description： CS20N60ANH, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-3P(N), which accords with the RoHS standard.. VDSS 600 V ID 20 A PD(TC=25℃) 250 W RDS(ON) 0.30 Ω TO–3P(N) Features： 竛 Fast Switching 竛 Low ON Resistance(Rdson≤0.45Ω) 竛 Low Gate Charge (Typical Data:70nC) 竛 Low Reverse transfer capacitances(Typical: 32pF) 竛 100% Single Pulse avalanche energy Test
