供应场效应管CS640A8H
| 价 格： | 1.00 | |
| 型号/规格： | CS640A8H | |
| 品牌/商标： | 华晶 | |
| 封装形式： | TO-220 | |
| 环保类别： | 无铅环保型 | |
| 安装方式： | 直插式 | |
| 包装方式： | 管装 | |
| 功率特征： | 中功率 |
主要应用领域：低压电子镇流器，电视机枕校
Silicon N-Channel Power MOSFET
CS640A8H
General Description
CS640A8H, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-220,
which accords with the RoHS standard.
Features
竛 Fast Switching
竛 Low ON Resistance(Rdso凛ホ
竛 Low Gate Charge (Typical Data:24nC)
竛 Low Reverse transfer capacitances(Typical:25pF)
竛 100% Single Pulse avalanche energy Test
- 所属城市：上海 上海市
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- 联系人： 田先生\刘小姐
- 电话：021-38046966
- 传真：021-38840019
- 手机：18964366969
- QQ ：
供应场效应管CS20N60ANH
信息内容：应用领域：电子镇流器，车载逆变器，非隔离式的LED驱动，汽车安定器 Silicon N-Channel Power MOSFET CS20N60ANH General Description： CS20N60ANH, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-3P(N), which accords with the RoHS standard.. VDSS 600 V ID 20 A PD(TC=25℃) 250 W RDS(ON) 0.30 Ω TO–3P(N) Features： 竛 Fast Switching 竛 Low ON Resistance(Rdson≤0.45Ω) 竛 Low Gate Charge (Typical Data:70nC) 竛 Low Reverse transfer capacitances(Typical: 32pF) 竛 100% Single Pulse avalanche energy Test
供应场效应管CS4N60A4HD
信息内容：主要应用领域：小功率充电器，PC电源辅助电源 Silicon N-Channel Power MOSFET CS4N60A4HD General Description： VDSS 600 V ID 4 A PD(TC=25℃) 55 W RDS(ON) 1.9 Ω CS4N60A4HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS standard. Features： 竛 Fast Switching 竛 ESD Improved Capability 竛 Low Gate Charge (Typical Data: 18nC) 竛 Low Reverse transfer capacitances(Typical: 14pF) 竛 100% Single Pulse avalanche energy Test
