供应场效应管CS12N60FA9HD
| 价 格： | 1.00 | |
| 型号/规格： | CS12N60FA9HD | |
| 品牌/商标： | 华晶 | |
| 封装形式： | TO-220 | |
| 环保类别： | 无铅环保型 | |
| 安装方式： | 直插式 | |
| 包装方式： | 管装 |
主要应用领域：电动车充电器
Silicon N-Channel Power MOSFET
CS12N60FA9HD
General Description：
VDSS
600
V
ID
12
A
PD(TC=25℃)
55
W
RDS(ON)
0.55
Ω
CS12N60FA9HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard.
Features：
竛 Fast Switching
竛 ESD Improved Capability
竛 Low Gate Charge (Typical Data: 18nC)
竛 Low Reverse transfer capacitances(Typical: 15pF)
竛 100% Single Pulse avalanche energy Test
- 所属城市：上海 上海市
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- 联系人： 田先生\刘小姐
- 电话：021-38046966
- 传真：021-38840019
- 手机：18964366969
- QQ ：
供应场效应管CS3410B4
信息内容：主要应用领域：电动车控制器，逆变器，汽车安定器 Silicon N-Channel Power MOSFET CS3410B4 General Description： CS3410B4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS standard. Features： Fast Switching Low ON Resistance(Rdson≤0.1Ω) Low Gate Charge (Typical Data:34nC) Low Reverse transfer capacitances(Typical:90PF) 100% Single Pulse avalanche energy Test
供应场效应管CS4N60A8H
信息内容：CS4N60A8HD为内部集成抗静电防护功能的产品，主要应用领域，小功率充电器，PC电源辅助电源 Silicon N-Channel Power MOSFET CS4N60A8H General Description： VDSS 600 V ID 4 A PD(TC=25℃) 75 W RDS(ON) 1.9 Ω CS4N60A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard. Features： 竛 Fast Switching 竛 Low ON Resistance(Rdson≤2.3Ω) 竛 Low Gate Charge (Typical Data: 18nC) 竛 Low Reverse transfer capacitances(Typical: 14pF) 竛 100% Single Pulse avalanche energy Test
