FEATURES:
* Power dissipation: Pcm : 500 mW
* Collector current: Icm : -3 A
* Collector-base voltage: V(BR)CBO : -40 V
* Operating and storage junction temperature range :
Tj, Tstg : -55℃ to +150℃
ELECTRICAL CHARACTERISTICS:
Symbol
Test conditions
MIN
TYP
MAX
Unit
V(BR)CBO
Ic=-100uA, IE=0
-40
V
V(BR)CEO
IC= -10mA,
IB=0
-30
V
V(BR)EBO
IE= -100uA,
IC=0
-6
V
ICBO
VCB=-40V, IE=0
-1
uA
ICEO
VCE=-30V, IB=0
-10
uA
IEBO
VEB=-6V,
IC=0
-1
uA
hFE(1)
VCE= -2V,
IC= -1A
60
400
hFE(2)
VCE= -2V,
IC=-100mA
32
VCE(sat)
IC=-2A,
IB=-0.2A
-0.5
V
VBE(sat)
IC=-2A,
IB=-0.2A
-1.5
V
fT
VCE=-5V ,
IC=-0.1A
f
=10MHz
50
MHz
FEATURES: Power dissipation PCM : 0.625 W(Tamb=25℃) Collector current ICM : 0.5 A Collector-base voltage V(BR)CBO : 40 V ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified) Symbol Test conditions MIN TYP MAX Unit V(BR)CBO Ic=100uA, IE=0 40 V V(BR)CEO IC= 0.1mA, IB=0 25 V V(BR)EBO IE= 100uA, IC=0 5 ...