场效应管8N60
| 价 格： | 面议 | |
| 型号/规格： | 8N60 | |
| 品牌/商标： | SZGKT | |
| 封装形式： | TO-220 | |
| 环保类别： | 无铅环保型 | |
| 安装方式： | 直插式 | |
| 包装方式： | 单件包装 |
DESCRIPTION:
The UTC 8N60 is a high voltage and higt current power MOSFET, designed to have better
characteristics, such as fast switching time, low gate charge, low on-state resistance and
have a high rugged avalanche characteristics. This power MOSFET is usually used at high
speed switching applications in power supplies, PWM motor controls, higt efficient DC to
DC converters and bridge circuits.
FEATURES:
* RDS=1.2Ω @VGS=10V ;
* Ultra low gate charge (typical 28 nC) ;
* Low reverse transfer Capacitance (CRSS=typical 12.0 pF) ;
* Fast switching capability ;
* Avalanche energy Specified ;
* Improved dV/dt capability, higt ruggedness
ABSOLUTE MAXIMUM RATINGS:
|
SYMBOL |
PARAMETER |
RATINGS |
UNIT |
|
|
VDSS |
Drain-source voltage 8N60-A |
600 |
V |
|
|
8N60-B |
650 |
|||
|
VGSS |
Gate-source voltage |
±30 |
V |
|
|
IAR |
Avalanche current |
7.5 |
A |
|
|
ID |
Continuous drain current |
Tc=25 , |
7.5 |
A |
|
Tc=100, |
4.6 |
A |
||
|
dV/dt |
Peak diode recovery dV/dt |
4.5 |
V/ns |
|
ELECTRICAL CHARACTERISTICS:
|
SYMBOL |
TEST CONDITIONS |
MIN |
TYP |
MAX |
UNIT |
|
IDSS |
VDS=600V, VGS=0V |
|
|
10 |
uA |
|
IGSS |
VGS=30V, VDS=0V |
|
|
100 |
nA |
|
VGS=-30V, VDS=0V |
|
|
-100 |
nA |
|
|
VGS(th) |
VDS=VGS,ID=250uA |
2.0 |
|
4.0 |
V |
|
RDS(on) |
VGS=10V, ID=3.75A |
|
1.0 |
1.2 |
Ω |
|
Ciss |
VDS=25V, VGS=0V f=1MHz |
|
965 |
1255 |
pF |
|
Coss |
|
105 |
135 |
pF |
|
|
Crss |
|
12 |
16 |
pF |
|
|
td(on) |
VDD=300V, ID=7.5A RG=25Ω, |
|
16.5 |
45 |
ns |
|
tr |
|
60.5 |
130 |
ns |
|
|
td(off) |
|
81 |
170 |
ns |
|
|
tf |
|
64.5 |
140 |
ns |
|
|
VSD |
VGS=0V, IS=7.5A |
|
|
1.4 |
V |
|
ISM |
|
|
|
30 |
A |
ORDERING INFORMATION:
8N60系列型号含义：/upfiles/2012/1115/file/20121115072627_19832.doc
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- QQ ：
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