场效应管 2N60
| 价 格： | 面议 | |
| 型号/规格： | 2N60 | |
| 品牌/商标： | SZGKT | |
| 封装形式： | TO-220 | |
| 环保类别： | 无铅环保型 | |
| 安装方式： | 直插式 | |
| 包装方式： | 单件包装 |
DESCRIPTION:
The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as
fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed switching applications in power
supplies, PWM motor controls, higt efficient DC to DC converters and bridge circuits.
FEATURES:
* RDS=3.8Ω @VGS=10V ;
* Ultra low gate charge (typical 9.0 nC) ;
* Low reverse transfer Capacitance (CRSS=typical5.0 pF) ;
* Fast switching capability ;
* Avalanche energy Specified ;
* Improved dV/dt capability, higt ruggedness
ABSOLUTE MAXIMUM RATINGS:
|
SYMBOL |
PARAMETER |
RATINGS |
UNIT |
|
|
VDSS |
Drain-source voltage |
600 |
V |
|
|
VGSS |
Gate-source voltage |
±30 |
V |
|
|
IAR |
Avalanche current |
2.0 |
A |
|
|
ID |
Continuous drain current |
Tc=25 , |
2.0 |
A |
|
Tc=100 , |
1.26 |
A |
||
|
dV/dt |
Peak diode recovery dV/dt |
4.5 |
V/ns |
|
ELECTRICAL CHARACTERISTICS:
|
SYMBOL |
TEST CONDITIONS |
MIN |
TYP |
MAX |
UNIT |
|
IDSS |
VDS=600V, VGS=0V |
|
|
10 |
uA |
|
VDS=480V, Tc=125, |
|
|
100 |
uA |
|
|
IGSS |
VGS=30V, VDS=0V |
|
|
100 |
nA |
|
VGS=-30V, VDS=0V |
|
|
-100 |
nA |
|
|
VGS(th) |
VDS=VGS, ID=250uA |
2.0 |
|
4.0 |
V |
|
RDS(on) |
VGS=10V, ID=1A |
|
3.8 |
5 |
Ω |
|
gfs |
VDS=50V, ID=1A |
|
2.25 |
|
S |
|
Ciss |
VDS=25V, VGS=0V f=1MHz |
|
270 |
350 |
pF |
|
Coss |
|
40 |
50 |
pF |
|
|
Crss |
|
5 |
7 |
pF |
|
|
td(on) |
VDD=300V, ID=2.4A RG=25Ω, |
|
10 |
30 |
ns |
|
tr |
|
25 |
60 |
ns |
|
|
td(off) |
|
20 |
50 |
ns |
|
|
tf |
|
25 |
60 |
ns |
|
|
VSD |
VGS=0V, IS=4.5A |
|
|
1.4 |
V |
|
ISM |
|
|
|
18 |
A |
ORDERING INFORMATION:
2N60系列型号含义：/upfiles/2012/1115/file/20121115072540_15600.doc
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