场效应管10N60
| 价 格： | 面议 | |
| 型号/规格： | 10N60 | |
| 品牌/商标： | SZGKT | |
| 封装形式： | TO-220 | |
| 环保类别： | 无铅环保型 | |
| 安装方式： | 直插式 | |
| 包装方式： | 单件包装 |
DESCRIPTION:
The UTC 10N60 is a high voltage and higt current power MOSFET, designed to have better
characteristics, such as fast switching time, low gate charge, low on-state resistance and
have a high rugged avalanche characteristics. This power MOSFET is usually used at high
speed switching applications in power supplies, PWM motor controls, higt efficient DC to
DC converters and bridge circuits.
FEATURES:
* RDS=0.73Ω @VGS=10V ;
* Ultra low gate charge (typical 44 nC) ;
* Low reverse transfer Capacitance (CRSS=typical 18 pF) ;
* Fast switching ;
* 100% avalanche test;
* Improved dV/dt capability
ABSOLUTE MAXIMUM RATINGS:
SYMBOL
PARAMETER
RATINGS
UNIT
VDSS
Drain-source voltage
10N60-A
600
V
10N60-B
650
VGSS
Gate-source voltage
±30
V
IAR
Avalanche current
9.5
A
ID
Continuous drain current
Tc=25 ,
9.5
A
Tc=100 ,
3.3
A
dV/dt
Peak diode recovery dV/dt
4.5
V/ns
ELECTRICAL
CHARACTERISTICS:
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
IDSS
VDS=600V, VGS=0V
1
uA
IGSS
VGS=30V, VDS=0V
100
nA
VGS=-30V, VDS=0V
-100
nA
VGS(th)
VDS=VGS,ID=250uA
2.0
4.0
V
RDS(on)
VGS=10V, ID=4.75A
0.6
0.73
Ω
Ciss
VDS=25V, VGS=0V
f=1MHz
1570
2040
pF
Coss
166
215
pF
Crss
18
14
pF
td(on)
VDD=300V, ID=7.5A
RG=25Ω,
23
55
ns
tr
69
150
ns
td(off)
144
300
ns
tf
17
165
ns
VSD
VGS=0V, IS=7.5A
1.4
V
ISM
38
A
ORDERING INFORMATION:
10N60系列型号含义：/upfiles/2012/1115/file/20121115070520_37756.doc
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