场效应管2SK3018
| 价 格： | 面议 | |
| 型号/规格： | 2SK3018 | |
| 品牌/商标： | SZGKT | |
| 封装形式： | TO-220 | |
| 环保类别： | 无铅环保型 | |
| 安装方式： | 直插式 | |
| 包装方式： | 单件包装 |
APPLICATIONS:
Interfacing , switching (30V, 100mA)
FEATURES:
1) Low on-resistance.
2) Fast switching speed.
3)Low voltage drive(2.5V) makes this device ideal for portable equipment.
4)Easily designed drive circuits.
5)Easy to parallel.
ABSOLUTE MAXIMUM RATINGS:
Symbol
Parameter
Limits
Unit
VDSS
Drain-source voltage
30
V
VGSS
Gate-source voltage
±20
V
ID
Drain current
Continuous
±100
mA
IDP*1
Pulsed
±400
mA
Tch
Channel temperature
150
℃
Tstg
Storage temperature
-55 to +150
℃
ELECTRICAL CHARACTERISTICS:
Symbol
Conditions
Min
Typ
Max
Unit
IGSS
VGS = ±20V, VDS = 0V
-
-
±1
uA
V(BR)DSS
ID = 10uA, VGS = 0V
30
-
-
V
IDSS
VDS = 30V, VGS = 0V
-
-
1
uA
VGS(th)
VDS = 3V, ID = 100uA
0.8
-
1.5
V
RDS(on)
ID = 10mA, VGS = 4V
-
5
8
Ω
ID = 1mA, VGS = 2.5V
-
7
13
Ω
Ciss
VDS = 5V, VGS = 0V
f = 1MHz
-
13
-
pF
Coss
-
9
-
pF
Crss
-
4
-
pF
td(on)
ID = 10mA, VDD= 5V
VGS = 5V
RL = 500Ω
RG = 10Ω
-
15
-
ns
tr
-
35
-
ns
td(off)
-
80
-
ns
tf
-
80
-
ns
- 所属城市：广东 深圳
- [联系时请说明来自维库仪器仪表网]
- 联系人： 翁经理/许小姐/谢小姐
- 电话：0755-27578409/27578368
- 传真：0755-27578290
- 手机：15999672043/13823390688/15019404824
- QQ ：
场效应管8N60
信息内容：DESCRIPTION: The UTC 8N60 is a high voltage and higt current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, higt efficient DC to DC converters and bridge circuits. FEATURES: * RDS=1.2Ω @VGS=10V ; * Ultra low gate charge (typical 28 nC) ; * Low reverse transfer Capacitance (CRSS=typical 12.0 pF) ; * Fast switching capability ; * Avalanche energy Specified ; * Improved dV/dt capability, higt ruggedness ABSOLUTE MAXIMUM RATINGS: SYMBOL PARAMETER RATINGS ...
场效应管 2N60
信息内容：DESCRIPTION: The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, higt efficient DC to DC converters and bridge circuits. FEATURES: * RDS=3.8Ω @VGS=10V ; * Ultra low gate charge (typical 9.0 nC) ; * Low reverse transfer Capacitance (CRSS=typical5.0 pF) ; * Fast switching capability ; * Avalanche energy Specified ; * Improved dV/dt capability, higt ruggedness ABSOLUTE MAXIMUM RATINGS: SYMBOL PARAMETER RATINGS UNIT ...
