场效应管IRF640
| 价 格： | 面议 | |
| 型号/规格： | IRF640 | |
| 品牌/商标： | SZGKT | |
| 封装形式： | TO-220 | |
| 环保类别： | 无铅环保型 | |
| 安装方式： | 直插式 | |
| 包装方式： | 单件包装 |
DESCRIPTION:
* Drain Current : –ID= 18A@ TC=25℃
* Drain
Source Voltage : VDSS=
200V(Min)
* Static Drain-Source On-Resistance : RDS(on) =
0.18Ω(max)
* Fast
Switching Speed
* Low Drive Requirement
APPLICATIONS：
Designed for low voltage, high speed power switching applications such as
switching regulators, converters,solenoid and relay drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)：
|
SYMBOL |
PARAMETER |
VALUE |
UNIT |
|
VDSS |
Drain-Source Voltage (VGS=0) |
200 |
V |
|
VGS |
Gate-Source Voltage |
±20 |
V |
|
ID |
Drain Current-continuous@ TC=25℃ |
18 |
A |
|
Tstg |
Storage TemperatureRange |
-55~150 |
℃ |
|
Tj |
MAX . Operating Junction Temperature |
150 |
℃ |
ELECTRICAL CHARACTERISTICS (TC=25℃)
|
SYMBOL |
PARAMETER |
CONDITIONS |
MIN |
MAX |
UNIT |
|
V(BR)DSS |
Drain-Source Breakdown Voltage |
VGS= 0; ID= 0.25mA |
200 |
|
V |
|
VGS(th) |
Gate Threshold Voltage |
VDS= VGS; ID= 0.25mA |
2 |
4 |
V |
|
RDS(on) |
Drain-Source On-stage Resistance |
VGS=10V; ID= 10A |
|
0.18 |
Ω |
|
IGSS |
Gate Source Leakage Current |
VGS= ±20V;VDS= 0 |
|
±100 |
nA |
|
IDSS |
Zero Gate Voltage Drain Current |
VDS= 200V; VGS= 0 |
|
200 |
uA |
|
VSD |
Diode Forward Voltage |
IF= 18A; VGS=0 |
|
2.0 |
V |
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