场效应管5N60
| 价 格： | 面议 | |
| 型号/规格： | 5N60 | |
| 品牌/商标： | SZGKT | |
| 封装形式： | TO-220 | |
| 环保类别： | 无铅环保型 | |
| 安装方式： | 直插式 | |
| 包装方式： | 单件包装 |
DESCRIPTION:
The UTC 5N60 is a high voltage MOSFET and is designed to have better characteristics, such as
fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed switching applications in power
supplies, PWM motor controls, higt efficient DC to DC converters and bridge circuits.
FEATURES:
* RDS=2.5Ω @VGS=10V ;
* Ultra low gate charge (typical 15 nC) ;
* Low reverse transfer Capacitance (CRSS=6.5 pF) ;
* Fast switching capability ;
* Avalanche energy Specified ;
* Improved dV/dt capability, higt ruggedness
ABSOLUTE MAXIMUM RATING:
SYMBOL
PARAMETER
RATINGS
UNIT
VDSS
Drain-source voltage
600
V
VGSS
Gate-source voltage
±30
V
IAR
Avalanche current
4.5
A
ID
Continuous drain current
Tc=25 ,
4.5
A
Tc=100 ,
2.6
A
dV/dt
Peak diode recovery dV/dt
4.5
V/ns
ELECTRIC CHARACTERISTICS:
|
SYMBOL |
TEST CONDITIONS |
MIN |
TYP |
MAX |
UNIT |
|
IDSS |
VDS=600V, VGS=0V |
|
|
1 |
uA |
|
VDS=480V, Tc=125, |
|
|
10 |
uA |
|
|
IGSS |
VGS=30V, VDS=0V |
|
|
100 |
nA |
|
VGS=-30V, VDS=0V |
|
|
-100 |
nA |
|
|
VGS(th) |
VDS=VGS, ID=250uA |
2.0 |
|
4.0 |
V |
|
RDS(on) |
VGS=10V, ID=2.25A |
|
2.0 |
2.5 |
Ω |
|
gfs |
VDS=40V, ID=2.25A |
|
4.7 |
|
S |
|
Ciss |
VDS=25V, VGS=0V f=1MHz |
|
515 |
670 |
pF |
|
Coss |
|
55 |
72 |
pF |
|
|
Crss |
|
6.5 |
8.5 |
pF |
|
|
td(on) |
VDD=300V, ID=4.5A RG=25Ω, |
|
10 |
30 |
ns |
|
tr |
|
42 |
90 |
ns |
|
|
td(off) |
|
38 |
85 |
ns |
|
|
tf |
|
46 |
100 |
ns |
|
|
VSD |
VGS=0V, IS=4.5A |
|
|
1.4 |
V |
|
ISM |
|
|
|
18 |
A |
ORDERING INFORMATION:
5N60系列型号含义：/upfiles/2012/1115/file/20121115032916_21991.doc
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