Bi-Directional Triode Thyristor 3A Mode Triac
ABSOLUTE MAXIMUM RATING (at T=25 ℃):
Characteristic |
Symbol |
Rating |
Unit |
R.M.S on-state current |
IT(RMS) |
0.6 |
A |
Peak gate current |
IGM |
1 |
A |
Peak gate voltage |
VGRM |
8 |
V |
ELECTRICAL CHARACTERISTIC (at T=25 ℃):
Characteristic
Symbol
Min
Typ
Max
Unit
Repetitive Peak Off-state Current
VDRM
400
-
-
V
Gate Trigger Current
IGT
5
-
200
uA
Peak On-state Voltage
VT
-
-
1.7
V
DESCRIPTION: The UTC 5N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, higt efficient DC to DC converters and bridge circuits. FEATURES: * RDS=2.5Ω @VGS=10V ; * Ultra low gate charge (typical 15 nC) ; * Low reverse transfer Capacitance (CRSS=6.5 pF) ; * Fast switching capability ; * Avalanche energy Specified ; * Improved dV/dt capability, higt ruggedness ABSOLUTE MAXIMUM RATING: SYMBOL PARAMETER RATINGS UNIT ...
DESCRIPTION: * Drain Current : –ID= 18A@ TC=25℃ * Drain Source Voltage : VDSS= 200V(Min) * Static Drain-Source On-Resistance : RDS(on) = 0.18Ω(max) * Fast Switching Speed * Low Drive Requirement APPLICATIONS: Designed for low voltage, high speed power switching applications such as switching regulators, converters,solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃): SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 200 V VGS Gate-Source Voltage ±20 ...