DESCRIPTION:
The PCR406 series silicon controlled rectifiers are high performance planner diffused PNPN
devices, These parts are intended for low cost high volume applications.
ABSOLUTE MAXIMUM RATINGS:
SYMBOL
TEST CONDITION
RATING
UNITS
VDRM
Tj=40 to 125℃
PCR406-6
600
V
RGk=1KΩ
PCR406-5
300
IT(RMS)
Tc=40℃
0.8
A
IT(AV)
Half cycle=180, Tc=40℃
0.5
A
ELECTRICAL CHARACTERISTICS:
SYMBOL
TEST CONDITIONS
MIN
MAX
UNIT
IDRM
VDRM (RGK=1KΩ), Tj=125℃
0.1
mA
VDRM (RGK=1KΩ), Tj=25℃
1.0
uA
VT
IT=0.4A
1.4
V
IT=0.8A
2.2
VT(TO)
Tj=125℃
0.95
V
IGT
VD=7V
200
uA
VGT
VD=7V
0.8
V
Bi-Directional Triode Thyristor 3A Mode Triac ABSOLUTE MAXIMUM RATING (at T=25 ℃): Characteristic Symbol Rating Unit R.M.S on-state current IT(RMS) 0.6 A Peak gate current IGM 1 A Peak gate voltage VGRM 8 V ELECTRICAL CHARACTERISTIC (at T=25 ℃): Characteristic Symbol ...
DESCRIPTION: The UTC 5N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, higt efficient DC to DC converters and bridge circuits. FEATURES: * RDS=2.5Ω @VGS=10V ; * Ultra low gate charge (typical 15 nC) ; * Low reverse transfer Capacitance (CRSS=6.5 pF) ; * Fast switching capability ; * Avalanche energy Specified ; * Improved dV/dt capability, higt ruggedness ABSOLUTE MAXIMUM RATING: SYMBOL PARAMETER RATINGS UNIT ...