双向可控硅 MAC12
| 价 格： | 面议 | |
| 型号/规格： | MAC12 | |
| 品牌/商标： | SZGKT |
DESCRIPTION:
Designed primarily for full-wave ac control applications, such as motor controls, heating controls or dimmers;
or wherever full−wave,silicon gate−controlled devices are needed.
FEATURES:
* Blocking Voltage to 800 Volts
* On−State Current Rating of 12 Amperes RMS at 70°C
* Uniform Gate Trigger Currents in Three Quadrants, Q1, Q2, and Q3
* High Immunity to dv/dt − 250 V/s Minimum at 125°C
* High Commutating di/dt − 6.5 A/ms Minimum at 125°C
* Industry Standard TO−220 AB Package
* High Surge Current Capability − 100 Amperes
* Pb−Free Packages are Available
MAXIMUM RATINGS：
* VDRM ≤ 600V (MAC12M 、MAC12HCMG、MAC12SM)
* VDRM ≤ 800V (MAC12N 、MAC12HCNG、MAC12SN)
* IT(RMS) ≤ 12A
* ITSM ≤ 100A
* IGT ≤ 5mA (MAC12SM、MAC12SN)
* IGT ≤ 35mA (MAC12M、MAC12N)
* IGT ≤ 50mA (MAC12HCMG、MAC12HCNG)
* VT : 1.85V
* VGT : 0.5-1.5V
- 所属城市：广东 深圳
- [联系时请说明来自维库仪器仪表网]
- 联系人： 翁经理/许小姐/谢小姐
- 电话：0755-27578409/27578368
- 传真：0755-27578290
- 手机：15999672043/13823390688/15019404824
- QQ ：
双向可控硅 MAC15
信息内容：DESCRIPTION: Designed primarily for full-wave ac control applications, such as solid−state relays, motor controls, heating controls and power supplies; or wherever full−wave silicon gate controlled solid−state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied main terminal voltage with positive or negative gate triggering. FEATURES: * Blocking Voltage to 800 V * All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability * Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability * Gate Triggering Guaranteed in Three Modes (MAC15 Series) or Four Modes (MAC15A Series) * These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) * VDRM ≤ 600V (MAC15−8G,...
双向可控硅 MAC16
信息内容：DESCRIPTION: Designed primarily for full wave ac control applications, such asmotor controls, heating controls or dimmers; or wherever full−wave,silicon gate−controlled devices are needed. FEATURES: * High Commutating di/dt and High Immunity to dV/dt @ 125°C * Minimizes Snubber Networks for Protection * Blocking Voltage to 800 Volts * On-State Current Rating of 16 Amperes RMS * High Surge Current Capability − 150 Amperes * Industry Standard TO-220AB Package for Ease of Design * Glass Passivated Junctions for Reliability and Uniformity * Operational in Three Quadrants, Q1, Q2, and Q3 * Pb−Free Packages are Available MAXIMUM RATINGS :(TJ = 25°C unless otherwise noted) * VDRM ≤ 600V (MAC16HCM,MAC16M,MAC16CM) * VDRM ≤ 800V (MAC16HCN,MAC16N,MAC16CN) * ITSM ≤ 150A * IT(RMS) ≤ 16A * ...
