DESCRIPTION:
Designed primarily for full wave ac control applications, such asmotor controls, heating controls or
dimmers; or wherever full−wave,silicon gate−controlled devices are needed.
FEATURES:
* High Commutating di/dt and High Immunity to dV/dt @ 125°C
* Minimizes Snubber Networks for Protection
* Blocking Voltage to 800 Volts
* On-State Current Rating of 16 Amperes RMS
* High Surge Current Capability − 150 Amperes
* Industry Standard TO-220AB Package for Ease of Design
* Glass Passivated Junctions for Reliability and Uniformity
* Operational in Three Quadrants, Q1, Q2, and Q3
* Pb−Free Packages are Available
MAXIMUM RATINGS :(TJ = 25°C unless otherwise noted)
* VDRM ≤ 600V (MAC16HCM,MAC16M,MAC16CM)
* VDRM ≤ 800V (MAC16HCN,MAC16N,MAC16CN)
* ITSM ≤ 150A
* IT(RMS) ≤ 16A
* IGT ≤ 35mA (MAC16CM , MAC16CN)
* IGT ≤ 50mA (MAC16M, MAC16N,MAC16HCM, MAC16HCN)
* VT : 1.2-1.6V
* VGT : 0.5-1.5V
DESCRIPTION: Designed primarily for full-wave AC control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full−wave silicon gate controlled solid−state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied main terminal voltage with positive or negative gate triggering. FRATURES: * Blocking Voltage to 600 Volts * All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability * Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability * Gate Triggering Guaranteed in Four Modes (Quadrants) * Pb−Free Packages are Available MAXIMUM RATINGS : (TJ = 25°C unless otherwise noted) * VDRM ≤ 600V (MAC210A8) * VDRM ≤ 800V (MAC210A10) ...
DESCRIPTION: Designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. FEATURES: * Blocking Voltage to 800 Volts * All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability * Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability * Gate Triggering Guaranteed in Four Modes * Pb−Free Packages are Available MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) * VDRM ≤ 600V (MAC212A8) * VDRM ≤ 800V (MAC212A10) * ITSM ≤ 100A ...