11N60 DG11N60 大功率开关电源MOS 场效应管
| 价 格： | 2.40 | |
| 品牌/型号： | DG 东光/11N60 DG11N60 | |
| 种类： | 绝缘栅MOSFET | |
| 用途： | SW-REG/开关电源 | |
| 封装外形： | CER-DIP/陶瓷直插 | |
| 材料： | N-FET硅N沟道 | |
| 开启电压： | 30（V） | |
| 夹断电压： | 2-4（V） | |
| 跨导： | 10（μS） | |
| 极间电容： | 1148（pF） | |
| 低频噪声系数： | 0.1（dB） | |
| 漏极电流： | 11000（mA） | |
| 耗散功率： | 175000（mW） | |
| 沟道类型： | N沟道 | |
| 导电方式： | 增强型 |
Features : High input resistance and low drive current Sound temperature characteristic Fast switching speed Easy to increase current capacity by parallel wayMajor Applications :Power switching circuit and power amplification circuit |
DG11N60 VDMOS power transistor | Parameter | Symbol | Rating value | Unit |
drain current ( continuous ) | ID | 11 | A | |
drain source voltage | VGS | ±30 | V | |
drain current ( pulsed ) | IDM | 33 | A | |
thermal resistance （junction case ) | RθJC | 1 | ℃/W | |
dissipated power Tc=25oC | Ptot | 175 | W | |
junction temperature | Tj | -55 to 150 | ℃ | |
storage temperature | Tstg | -55 to 150 | ℃ |
DG11N60 VDMOS power transistor | Parameter | Symbol | Test conditions | Value | Unit | |
MIN | NOR | MAX | ||||
D-S voltage | VDSS | VGS=0V, ID=250μA | 600 | V | ||
D-S on resistance | RDS(on) | VGS=10V, ID=5.5A | 0.32 | 0.38 | Ω | |
gate threshold voltage | VGS(th) | VDS=VGS, ID=250μA | 2 | 4 | V | |
S-D leakage current | IDSS | VDS=600V, VGS=0V | 10 | μA | ||
G-S leakage current | IGSS | VGS= 30V | ±100 | nA | ||
transconductance | gfs | VDS=50V, ID=5.5A | 9.7 | S | ||
input capacitance | Ciss | VGS=0V, VDS=25V, f=1.0mHz | 1148 | 1490 | pF |
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1N60 DG1N60 WFF1N60 MOS 场效应管厂家直销
信息内容：提供TO-220 TO-220F TO-92 TO-252 封装 DG1N60 VDMOS power transistor Absolute maximum ratings ( Tamb=25oC)ParameterSymbolRating valueUnitdrain current ( continuous )ID1Adrain source voltageVGS±30Vdrain current ( pulsed )IDM4.8Athermal resistance （junction case )RθJC3.13℃/Wdissipated power Tc=25oCPtot40Wjunction temperatureTj-55 to 150 ℃storage temperatureTstg-55 to 150 ℃ DG1N60 VDMOS power transistor Electricalcharacteristics ( Tamb=25oC)ParameterSymbolTest conditionsValueUnitMINNORMAXD-S voltageVDSSVGS=0V, ID=250μA600 VD-S on resistanceRDS(on)VGS=10V, ID=0.6A 9.311.5Ωgate threshold voltageVGS(th)VDS=VGS, ID=250μA2 4VS-D leakage currentIDSSVDS=600V, VGS=0V 10μAG-S leakage currentIGSSVGS= 30V ±100nAtransconductancegfsVDS=50V, ID=0.6A 0.9 Sinput capacitance CissVGS=0V, VDS=25V, f=1.0mHz 120150pF
10N60 DG10N60 电源开关MOS 场效应管 低价销售
信息内容：Features : High input resistance and low drive current Sound temperature characteristic Fast switching speed Easy to increase current capacity by parallel wayMajorApplications :Power switching circuit and power amplification circuitDG10N60 VDMOS power transistorAbsolute maximum ratings ( Tamb=25oC)ParameterSymbolRating valueUnitdrain current ( continuous )ID9.5Adrain source voltageVGS±30Vdrain current ( pulsed )IDM38Athermal resistance （junction case )RθJC0.8℃/Wdissipated power Tc=25oCPtot156Wjunction temperatureTj-55 to 150 ℃storage temperatureTstg-55 to 150 ℃ DG10N60 VDMOS power transistor Electrical characteristics ( Tamb=25oC)ParameterSymbolTest conditionsValueUnitMINNORMAXD-S voltageVDSSVGS=0V, ID=250μA600 VD-S on resistanceRDS(on)VGS=10V, ID=4.75A 0.60.73Ωgate threshold voltageVGS(th)VDS=VGS, ID=250μA2 4VS-D leakage currentIDSSVDS=600V, VGS=0V 10μAG-S leakage currentIGSSVGS= 30V ±100nAtrans...
