1N60 DG1N60 WFF1N60 MOS 场效应管厂家直销
| 价 格： | 0.40 | |
| 品牌/型号： | 东光/DG 1N60 | |
| 种类： | 绝缘栅MOSFET | |
| 用途： | CHOP/斩波、限幅 | |
| 封装外形： | P-DIT/塑料双列直插 | |
| 材料： | N-FET硅N沟道 | |
| 开启电压： | 30（V） | |
| 夹断电压： | 2-4（V） | |
| 跨导： | 0.9（μS） | |
| 极间电容： | 120（pF） | |
| 低频噪声系数： | 0.1（dB） | |
| 漏极电流： | 1000（mA） | |
| 耗散功率： | 4000（mW） | |
| 沟道类型： | N沟道 | |
| 导电方式： | 增强型 |
提供TO-220 TO-220F TO-92 TO-252 封装
| DG1N60 VDMOS power transistor Absolute maximum ratings ( Tamb=25oC) | Parameter | Symbol | Rating value | Unit |
| drain current ( continuous ) | ID | 1 | A | |
| drain source voltage | VGS | ±30 | V | |
| drain current ( pulsed ) | IDM | 4.8 | A | |
| thermal resistance （junction case ) | RθJC | 3.13 | ℃/W | |
| dissipated power Tc=25oC | Ptot | 40 | W | |
| junction temperature | Tj | -55 to 150 | ℃ | |
| storage temperature | Tstg | -55 to 150 | ℃ |
| DG1N60 VDMOS power transistor Electricalcharacteristics ( Tamb=25oC) | Parameter | Symbol | Test conditions | Value | Unit | |
MIN | NOR | MAX | ||||
| D-S voltage | VDSS | VGS=0V, ID=250μA | 600 | V | ||
| D-S on resistance | RDS(on) | VGS=10V, ID=0.6A | 9.3 | 11.5 | Ω | |
| gate threshold voltage | VGS(th) | VDS=VGS, ID=250μA | 2 | 4 | V | |
| S-D leakage current | IDSS | VDS=600V, VGS=0V | 10 | μA | ||
| G-S leakage current | IGSS | VGS= 30V | ±100 | nA | ||
| transconductance | gfs | VDS=50V, ID=0.6A | 0.9 | S | ||
| input capacitance | Ciss | VGS=0V, VDS=25V, f=1.0mHz | 120 | 150 | pF |
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10N60 DG10N60 电源开关MOS 场效应管 低价销售
信息内容：Features : High input resistance and low drive current Sound temperature characteristic Fast switching speed Easy to increase current capacity by parallel wayMajorApplications :Power switching circuit and power amplification circuitDG10N60 VDMOS power transistorAbsolute maximum ratings ( Tamb=25oC)ParameterSymbolRating valueUnitdrain current ( continuous )ID9.5Adrain source voltageVGS±30Vdrain current ( pulsed )IDM38Athermal resistance （junction case )RθJC0.8℃/Wdissipated power Tc=25oCPtot156Wjunction temperatureTj-55 to 150 ℃storage temperatureTstg-55 to 150 ℃ DG10N60 VDMOS power transistor Electrical characteristics ( Tamb=25oC)ParameterSymbolTest conditionsValueUnitMINNORMAXD-S voltageVDSSVGS=0V, ID=250μA600 VD-S on resistanceRDS(on)VGS=10V, ID=4.75A 0.60.73Ωgate threshold voltageVGS(th)VDS=VGS, ID=250μA2 4VS-D leakage currentIDSSVDS=600V, VGS=0V 10μAG-S leakage currentIGSSVGS= 30V ±100nAtrans...
