价 格: | 3.00 | |
是否提供加工定制: | 是 | |
品牌/商标: | ISC | |
型号/规格: | 2SB945 | |
应用范围: | 放大 | |
材料: | 硅(Si) | |
极性: | PNP型 | |
结构: | 平面型 | |
封装形式: | 直插型 | |
封装材料: | 塑料封装 |
DESCRIPTION
·Low Collector Saturation Voltage-
: VCE(sat)= -0.5V(Max)@IC= -4A
·Good Linearity of hFE
·Large Collector Current IC
·Complement to Type 2SD1270
APPLICATIONS
·Designed for power switching applications
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -130 | V |
VCEO | Collector-Emitter Voltage | -80 | V |
VEBO | Emitter-Base Voltage | -7 | V |
IC | Collector Current-Continuous | -5 | A |
ICM | Collector Current-Peak | -10 | A |
PC | Collector Power Dissipation @ Ta=25℃ | 2 | W |
Collector Power Dissipation @ TC=25℃ | 40 | ||
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= -10mA ; IB= 0 | -80 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= -4A; IB= -0.2A |
|
| -0.5 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= -4A; IB= -0.2A |
|
| -1.5 | V |
ICBO | Collector Cutoff Current | VCB= -100V ; IE= 0 |
|
| -10 | μA |
IEBO | Emitter Cutoff Current | VEB= -5V ; IC= 0 |
|
| -50 | μA |
hFE-1 | DC Current Gain | IC= -0.1A ; VCE= -2V | 45 |
|
|
|
hFE-2 | DC Current Gain | IC= -2A ; VCE= -2V | 90 |
| 260 |
|
fT | Current-Gain—Bandwidth Product | IC=-0.5A; VCE= -10V;ftest=10MHz |
| 30 |
| MHz |
Switching times | ||||||
ton | Turn-on Time | IC= -2.0A ,IB1= -IB2= -0.2A, |
| 0.13 |
| μs |
tstg | Storage Time |
| 0.5 |
| μs | |
tf | Fall Time |
| 0.13 |
| μs |
u hFE-2Classifications
Q | P |
90-180 | 130-260 |
DESCRIPTION ·Complement to Type MJ15022/15024·Excellent Safe Operating Area·High DC current Gain: hFE= 5 (Min)@ IC= -8 A APPLICATIONS·Designed for high power audio, disk head positionersand other linear applications ABSOLUTE MAXIMUM RATINGS(TC=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base VoltageMJ15023-350VMJ15025-400VCEOCollector-Emitter VoltageMJ15023-200VMJ15025-250VEBOEmitter-Base Voltage-5VICCollector Current-Continuous-16AICMCollector Current-Peak -30AIBBase Current-Continuous-5APDTotal Power Dissipation @TC=25℃250WTjJunction Temperature150℃TstgStorage Temperature-65~200℃
DESCRIPTION ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= 80V(Min)·Complement to type BD442 APPLICATIONS·Designed for medium power linear and switchingapplications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage 80VVCESCollector-Emitter Voltage 80VVCEOCollector-Emitter Voltage 80VVEBOEmitter-Base Voltage5VICCollector Current-Continuous4AICMCollector Current-Pulse7AIBBase Current-Continuous1APCCollector Power Dissipation@ TC=25℃36WTJJunctionTemperature150℃TstgStorageTemperature Range-65~150℃ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITVCEO(SUS)Collector-Emitter Sustaining VoltageIC= 100mA; IB= 080 VVCE(sat)Collector-Emitter Saturation VoltageIC= 2A; IB= 0.2A 0.8VVBE(on)-1Base-Emitter On VoltageIC= 10mA; VCE= 5V 0.58 VVBE(on)-2Base-Emitter On Voltag...