价 格: | 10.00 | |
是否提供加工定制: | 是 | |
品牌/商标: | ISC | |
型号/规格: | 2SA882 | |
应用范围: | 放大 | |
材料: | 硅(Si) | |
极性: | PNP型 | |
结构: | 平面型 | |
封装形式: | 直插型 | |
封装材料: | 金属封装 |
DESCRIPTION
·High Power Dissipation-
: PC= 100W(Max.)@TC=25℃
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -130V(Min.)
APPLICATIONS
·Designed for power and switching applications.
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -130 | V |
VCEO | Collector-Emitter Voltage | -130 | V |
VEBO | Emitter-Base Voltage | -5 | V |
IC | Collector Current-Continuous | -7 | A |
PC | Collector Power Dissipation @TC=25℃ | 100 | W |
Tj | Junction Temperature | 150 | ℃ |
Tstg | Storage Temperature | -65~200 | ℃ |
ELECTRICAL CHARACTERISTICS
Tj=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= -30mA; IB= 0 | -130 |
|
| V |
VCE(sat)-1 | Collector-Emitter Saturation Voltage | IC= -3A; IB= -0.3A |
|
| -1.0 | V |
VCE(sat)-2 | Collector-Emitter Saturation Voltage | IC= -7A; IB= -1.5A |
|
| -3.0 | V |
VBE(on) | Base-Emitter On Voltage | IC= -3A; VCE= -4V |
|
| -1.6 | V |
ICBO | Collector Cutoff Current | VCB= -130V; IE= 0 |
|
| -0.1 | mA |
IEBO | Emitter Cutoff Current | VEB= -5V; IC= 0 |
|
| -0.1 | mA |
hFE-1 | DC Current Gain | IC= -1A; VCE= -4V | 40 |
|
|
|
hFE-2 | DC Current Gain | IC= -3A; VCE= -4V | 20 |
|
|
|
DESCRIPTION ·Low Collector Saturation Voltage-: VCE(sat)= -0.5V(Max)@IC= -4A·Good Linearity of hFE·Large Collector Current IC·Complement to Type 2SD1270 APPLICATIONS·Designed for power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage -130VVCEOCollector-Emitter Voltage -80VVEBOEmitter-Base Voltage-7VICCollector Current-Continuous-5AICMCollector Current-Peak-10APCCollector Power Dissipation@ Ta=25℃2WCollector Power Dissipation@ TC=25℃40TJJunctionTemperature150℃TstgStorageTemperature Range-55~150℃ ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= -10mA ; IB= 0-80 VVCE(sat)Collector-Emitter Saturation VoltageIC= -4A; IB= -0.2A -0.5VVBE(sat)Base-Emitter Saturation VoltageIC= -4A; IB= -0.2A -1.5VICBOCollecto...
DESCRIPTION ·Complement to Type MJ15022/15024·Excellent Safe Operating Area·High DC current Gain: hFE= 5 (Min)@ IC= -8 A APPLICATIONS·Designed for high power audio, disk head positionersand other linear applications ABSOLUTE MAXIMUM RATINGS(TC=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base VoltageMJ15023-350VMJ15025-400VCEOCollector-Emitter VoltageMJ15023-200VMJ15025-250VEBOEmitter-Base Voltage-5VICCollector Current-Continuous-16AICMCollector Current-Peak -30AIBBase Current-Continuous-5APDTotal Power Dissipation @TC=25℃250WTjJunction Temperature150℃TstgStorage Temperature-65~200℃