价 格: | 7.00 | |
是否提供加工定制: | 是 | |
品牌/商标: | ISC | |
型号/规格: | 2SC4108 | |
应用范围: | 放大 | |
材料: | 硅(Si) | |
极性: | NPN型 | |
结构: | 平面型 | |
封装形式: | 直插型 | |
封装材料: | 塑料封装 |
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min)
·High Switching Speed
·Wide Area of Safe Operation
APPLICATIONS
·Designed for switching regulator and general purpose
applications.
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 500 | V |
VCEO | Collector-Emitter Voltage | 400 | V |
VEBO | Emitter-Base voltage | 7 | V |
IC | Collector Current-Continuous | 12 | A |
ICM | Collector Current-Peak | 25 | A |
IB | Base Current-Continuous | 4 | A |
PC | Collector Power Dissipation @ TC=25℃ | 100 | W |
Collector Power Dissipation @ Ta=25℃ | 2.5 | ||
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CBO | Collector-Base Breakdown Voltage | IC= 1mA; IE= 0 | 500 |
| V | |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= 10mA; RBE=∞ | 400 |
|
| V |
V(BR)EBO | Emitter-Base Breakdown Voltage | IE= 1m A; IC= 0 | 7 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 8A; IB= 1.6A |
|
| 0.8 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= 8A; IB= 1.6A |
|
| 1.5 | V |
ICBO | Collector Cutoff Current | VCB= 400V ; IE= 0 |
|
| 10 | μA |
IEBO | Emitter Cutoff Current | VEB= 5V; IC= 0 |
|
| 10 | μA |
hFE-1 | DC Current Gain | IC= 1.6A; VCE= 5V | 15 |
| 50 |
|
hFE-2 | DC Current Gain | IC= 8A; VCE= 5V | 10 |
|
|
|
hFE-3 | DC Current Gain | IC= 10mA ; VCE= 5V | 10 |
|
|
|
fT | Current-Gain—Bandwidth Product | IC= 1.6A; VCE= 10V |
| 20 |
| MHz |
COB | Output Capacitance | IE= 0; VCB= 10V; ftest= 1.0MHz |
| 160 |
| pF |
Switching Times | ||||||
ton | Turn-on Time | IC= 10A, IB1= 2A; IB2= -4A RL= 20Ω; VCC= 200V |
|
| 0.5 | μs |
tstg | Storage Time |
|
| 2.5 | μs | |
tf | Fall Time |
|
| 0.3 | μs |
u hFE-1Classifications
L | M | N |
15-30 | 20-40 | 30-50 |
DESCRIPTION ·High Power Dissipation-: PC= 100W(Max.)@TC=25℃·Collector-Emitter Breakdown Voltage-: V(BR)CEO= -130V(Min.) APPLICATIONS·Designed for power and switching applications. Absolute maximum ratings(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage-130VVCEOCollector-Emitter Voltage-130VVEBOEmitter-Base Voltage-5VICCollector Current-Continuous -7APCCollector Power Dissipation@TC=25℃100WTjJunction Temperature150℃TstgStorage Temperature-65~200℃ ELECTRICAL CHARACTERISTICSTj=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= -30mA; IB= 0-130 VVCE(sat)-1Collector-Emitter Saturation VoltageIC= -3A; IB= -0.3A -1.0VVCE(sat)-2Collector-Emitter Saturation VoltageIC= -7A; IB= -1.5A -3.0VVBE(on)Base-Emitter On VoltageIC= -3A; VCE= -4V -1.6VICBOCollector Cutoff CurrentVCB= -130V; IE= 0 -0.1mAIEBOEmitter Cutoff CurrentVEB= -5V; IC= 0 -0.1mAhFE-1DC Current GainIC= -1A; V...
DESCRIPTION ·Low Collector Saturation Voltage-: VCE(sat)= -0.5V(Max)@IC= -4A·Good Linearity of hFE·Large Collector Current IC·Complement to Type 2SD1270 APPLICATIONS·Designed for power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage -130VVCEOCollector-Emitter Voltage -80VVEBOEmitter-Base Voltage-7VICCollector Current-Continuous-5AICMCollector Current-Peak-10APCCollector Power Dissipation@ Ta=25℃2WCollector Power Dissipation@ TC=25℃40TJJunctionTemperature150℃TstgStorageTemperature Range-55~150℃ ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= -10mA ; IB= 0-80 VVCE(sat)Collector-Emitter Saturation VoltageIC= -4A; IB= -0.2A -0.5VVBE(sat)Base-Emitter Saturation VoltageIC= -4A; IB= -0.2A -1.5VICBOCollecto...