价 格: | 10.00 | |
是否提供加工定制: | 是 | |
品牌/商标: | ISC | |
型号/规格: | 2SA1040 | |
应用范围: | 放大 | |
材料: | 硅(Si) | |
极性: | PNP型 | |
结构: | 平面型 | |
封装形式: | 直插型 | |
封装材料: | 金属封装 |
DESCRIPTION
·High Current Capability
·Good Linearity of hFE
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min.)
·Complement to Type 2SC2430
APPLICATIONS
·Designed for power switching , high frequency power
amplifer, switching regulator and DC/DC converters.
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -120 | V |
VCEO | Collector-Emitter Voltage | -120 | V |
VEBO | Emitter-Base Voltage | -5 | V |
IC | Collector Current-Continuous | -10 | A |
PC | Collector Power Dissipation @TC=25℃ | 100 | W |
Tj | Junction Temperature | 175 | ℃ |
Tstg | Storage Temperature | -55~175 | ℃ |
ELECTRICAL CHARACTERISTICS
Tj=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= -30mA; IB= 0 | -120 |
|
| V |
V(BR)CBO | Collector-Base Breakdown Voltage | IC= -1mA; IE= 0 | -120 |
|
| V |
V(BR)EBO | Emitter-Base Breakdown Voltage | IE= -1mA; IC= 0 | -5 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= -5A; IB= -0.5A |
|
| -1.2 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= -5A; IB= -0.5A |
|
| -1.8 | V |
ICBO | Collector Cutoff Current | VCB= -120V; IE= 0 |
|
| -50 | μA |
IEBO | Emitter Cutoff Current | VEB= -5V; IC= 0 |
|
| -50 | μA |
hFE | DC Current Gain | IC= -1A; VCE= -5V | 35 |
| 200 |
|
COB | Output Capacitance | IE= 0; VCB= -10V; f= 1.0MHz |
| 350 |
| pF |
fT | Current-Gain—Bandwidth Product | IC= -1A; VCE= -10V |
| 60 |
| MHz |
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-: V(BR)CEO= 400V(Min)·High Switching Speed·Wide Area of Safe Operation APPLICATIONS·Designed for switching regulator and general purposeapplications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage 500VVCEOCollector-Emitter Voltage 400VVEBOEmitter-Base voltage7VICCollector Current-Continuous12AICMCollector Current-Peak25AIBBase Current-Continuous4APCCollector Power Dissipation@ TC=25℃100WCollector Power Dissipation@ Ta=25℃2.5TJJunctionTemperature150℃TstgStorageTemperature Range-55~150℃ ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CBOCollector-Base Breakdown Voltage IC= 1mA; IE= 0500 VV(BR)CEOCollector-Emitter Breakdown Voltage IC= 10mA; RBE=∞400 VV(BR)EBOEmitter-Bas...
DESCRIPTION ·High Power Dissipation-: PC= 100W(Max.)@TC=25℃·Collector-Emitter Breakdown Voltage-: V(BR)CEO= -130V(Min.) APPLICATIONS·Designed for power and switching applications. Absolute maximum ratings(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage-130VVCEOCollector-Emitter Voltage-130VVEBOEmitter-Base Voltage-5VICCollector Current-Continuous -7APCCollector Power Dissipation@TC=25℃100WTjJunction Temperature150℃TstgStorage Temperature-65~200℃ ELECTRICAL CHARACTERISTICSTj=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= -30mA; IB= 0-130 VVCE(sat)-1Collector-Emitter Saturation VoltageIC= -3A; IB= -0.3A -1.0VVCE(sat)-2Collector-Emitter Saturation VoltageIC= -7A; IB= -1.5A -3.0VVBE(on)Base-Emitter On VoltageIC= -3A; VCE= -4V -1.6VICBOCollector Cutoff CurrentVCB= -130V; IE= 0 -0.1mAIEBOEmitter Cutoff CurrentVEB= -5V; IC= 0 -0.1mAhFE-1DC Current GainIC= -1A; V...