价 格: | 5.00 | |
是否提供加工定制: | 是 | |
品牌/商标: | isc | |
型号/规格: | 2SD1294 | |
应用范围: | 功率 | |
材料: | 硅(Si) | |
极性: | NPN型 | |
结构: | 平面型 | |
封装形式: | TO-3PI | |
封装材料: | 塑料封装 |
DESCRIPTION
·Included Avalanche Diode-
: VZ= 60±15V
·High DC Current Gain
: hFE= 2000~20000@ IC= 0.5A, VCE= 5V
APPLICATIONS
·Power regulator for line operated TV applications.
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 60±15 | V |
VCEO | Collector-Emitter Voltage | 60±15 | V |
VEBO | Emitter-Base Voltage | 6 | V |
IC | Collector Current-Continuous | 5 | A |
ICM | Collector Current-Pulse | 20 | A |
PC | Collector Power Dissipation @ TC=25℃ | 80 | W |
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CBO | Collector-Base Breakdown Voltage | IC= 100mA; IE= 0 | 45 |
| 75 | V |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= 100mA; IB= 0 | 45 |
| 75 | V |
VCE(sat)-1 | Collector-Emitter Saturation Voltage | IC= 0.5A; IB= 1mA |
|
| 1.5 | V |
VCE(sat)-2 | Collector-Emitter Saturation Voltage | IC= 1A; IB= 1mA |
|
| 2.5 | V |
VBE(on) | Base-Emitter On Voltage | IC= 0.5A; VCE= 5V |
|
| 1.8 | V |
IEBO | Emitter Cutoff Current | VEB= 6V; IC= 0 |
|
| 100 | μA |
hFE | DC Current Gain | IC= 0.5A; VCE= 5V | 2000 |
| 20000 |
|
"
DESCRIPTION ·High Current Capability·Good Linearity of hFE·Collector-Emitter Breakdown Voltage-: V(BR)CEO= -120V(Min.)·Complement to Type 2SC2430 APPLICATIONS·Designed for power switching , high frequency poweramplifer, switching regulator and DC/DC converters. Absolute maximum ratings(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage-120VVCEOCollector-Emitter Voltage-120VVEBOEmitter-Base Voltage-5VICCollector Current-Continuous -10APCCollector Power Dissipation@TC=25℃100WTjJunction Temperature175℃TstgStorage Temperature-55~175℃ ELECTRICAL CHARACTERISTICSTj=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= -30mA; IB= 0-120 VV(BR)CBOCollector-Base Breakdown VoltageIC= -1mA; IE= 0-120 VV(BR)EBOEmitter-Base Breakdown VoltageIE= -1mA; IC= 0-5 VVCE(sat)Collector-Emitter Saturation VoltageIC= -5A; IB= -0.5A -1.2VVBE(sat)Base-Emitter Saturation VoltageIC= -...
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-: V(BR)CEO= 400V(Min)·High Switching Speed·Wide Area of Safe Operation APPLICATIONS·Designed for switching regulator and general purposeapplications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage 500VVCEOCollector-Emitter Voltage 400VVEBOEmitter-Base voltage7VICCollector Current-Continuous12AICMCollector Current-Peak25AIBBase Current-Continuous4APCCollector Power Dissipation@ TC=25℃100WCollector Power Dissipation@ Ta=25℃2.5TJJunctionTemperature150℃TstgStorageTemperature Range-55~150℃ ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CBOCollector-Base Breakdown Voltage IC= 1mA; IE= 0500 VV(BR)CEOCollector-Emitter Breakdown Voltage IC= 10mA; RBE=∞400 VV(BR)EBOEmitter-Bas...